Investigation of the Inverted ZnCuInS/ZnS Based Quantum-Dot Light-Emitting Diodes with the Sputtered ZnO Film Layers

Biswas, Mohammad Mostafizur Rahman; Okada, Hiroyuki

doi:10.36463/idw.2020.0427

Proceedings of the International Display Workshops

2020

DOI: 10.36463/idw.2020.0427

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Investigation of the Inverted ZnCuInS/ZnS Based Quantum-Dot Light-Emitting Diodes with the Sputtered ZnO Film Layers

Mohammad Mostafizur Rahman Biswas¹,

Hiroyuki Okada²

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65‐7: Student Paper: Cd‐Free Quantum‐Dot Light‐Emitting Diode with a Mixed Single Layer to improve the Flatness of Current Efficiency

Biswas

Okada

2021

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The performance of the Cd‐free quantum‐dot light emitting diode (QLED) was investigated by mixing the hole and electron transport materials with the emission layer. With an optimized mixing ratio of the hole transport and electron transport materials, the current efficiency of 4.2 cd/A and EQE of 2.2% was achieved using the ZnCuInS/ZnS‐based QLED at yellow emission. Additionally, after optimizing the mixing ratios, the carrier injection is balanced, so the current efficiency is constant for wide current densities.

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65‐7: Student Paper: Cd‐Free Quantum‐Dot Light‐Emitting Diode with a Mixed Single Layer to improve the Flatness of Current Efficiency

Biswas

Okada

2021

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

show abstract

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Investigation of the Inverted ZnCuInS/ZnS Based Quantum-Dot Light-Emitting Diodes with the Sputtered ZnO Film Layers

Cited by 1 publication

References 0 publications

65‐7: Student Paper: Cd‐Free Quantum‐Dot Light‐Emitting Diode with a Mixed Single Layer to improve the Flatness of Current Efficiency

65‐7: Student Paper: Cd‐Free Quantum‐Dot Light‐Emitting Diode with a Mixed Single Layer to improve the Flatness of Current Efficiency

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