Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction

Ruh, E.; Mueller, Elisabeth; Mußler, Gregor; Sigg, H.; Gruetzmacher, D.

doi:10.1016/j.ultramic.2010.05.003

Cited by 5 publications

(3 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Previous measurements of elastic lattice distortions in device nanostructures done with convergent beam electron diffraction, − nanobeam electron diffraction, and high-resolution TEM , were determined at the nanometer scale, but with destructive sample preparation that potentially changes the sample lattice, leading to uncertainty in the measurements. TEM techniques such as dark-field holography have been developed to image thicker samples to mitigate strain relaxation, but still preclude in operando device studies.…”

mentioning

confidence: 99%

Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography

et al. 2012

View full text Add to dashboard Cite

We imaged nanoscale lattice strain in a multilayer semiconductor device prototype with a new X-ray technique, nanofocused Bragg projection ptychography. Applying this technique to the epitaxial stressor layer of a SiGe-on-SOI structure, we measured the internal lattice behavior in a targeted region of a single device and demonstrated that its internal strain profile consisted of two competing lattice distortions. These results provide the strongest nondestructive test to date of continuum modeling predictions of nanoscale strain distributions.

show abstract

mentioning

confidence: 99%

Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography

et al. 2012

View full text Add to dashboard Cite

show abstract

“…[78] Similarly, convergent-beam electron diffraction (CBED) mapping can be performed on STEM by altering the optical system to attain a small and convergent probe. [79] High-resolution applications of diffraction mapping techniques include local Ge concentration determination in Si/SiGe nanostructures, [80] the evaluation of lattice distortions on InP nanowires containing an axial screw dislocation, [81] and strain mapping in metal oxide semiconductor field-effect transistors (MOSFET) devices. [82,83] In addition, improved grain orientation mapping on polycrystalline materials has been demonstrated by the use of precession-enhanced electron diffraction.…”

Section: Diffraction Mappingmentioning

confidence: 99%

High‐Resolution Scanning Transmission Electron Microscopy (HRSTEM) Techniques: High‐Resolution Imaging and Spectroscopy Side by Side

et al. 2012

View full text Add to dashboard Cite

This work presents an overview of high-resolution scanning transmission electron microscopy (HRSTEM) techniques and exemplifies the novel quantitative characterization possibilities that have emerged from recent advances in these methods. The synergistic combination of atomic resolution imaging and spectroscopy provided by HRSTEM is highlighted as a unique feature that can provide a comprehensive analytical description of material properties at the nanoscale. State-of-the-art high-angle annular dark field and annular bright field examples are depicted as well as the use of X-ray energy-dispersive spectroscopy and electron energy-loss spectroscopy for probing samples properties at the atomic scale. In addition, promising techniques such as cathodoluminescence, confocal HRSTEM, and diffraction mapping are introduced. The presented examples and results indicate that HRSTEM-related techniques are fundamental tools for comprehensive assessment of properties at the atomic scale.

show abstract

“…High resolution applications of diffraction mapping techniques include the local Ge concentration determination in Si/SiGe nanostructures (RUH et al, 2010), the lattice distortions evaluation on InP nanowires containing an axial screw dislocation (TIZEI et al, 2011), and the strain mapping in MOSFET devices (UESUGI et al, 2011;DIERCKS et al, 2011). In addition, improved grain orientation mapping on polycrystalline materials has been demonstrated by the use of precession-enhanced electron diffraction (MOECK et al, 2011).…”

Section: Diffraction Mappingmentioning

confidence: 99%

Modelamento de nanocristais pelo uso de técnicas avançadas de QHRTEM

Stroppa¹,

Londono²

View full text Add to dashboard Cite

Ao orientador e amigo Antonio Ramirez, por todo o suporte nos projetos realizados, pela motivação, pela liberdade em criar e pelo aprendizado, acadêmico ou não, ao longo destes anos. Mais importante que os frutos científicos conseguidos, ficará a sua influência na minha formação como pesquisador, profissional e pessoa.Ao co-orientador Edson Leite, pelos ensinamentos fundamentais e pelo suporte desde a iniciação científica. Se hoje tenho prazer em pesquisar, devo isto aos desafios e às possibilidades que tive trabalhando contigo.Ao Luciano Montoro, por todo o suporte prestado, pelo aprendizado proporcionado e especialmente pela paciência dispendida nos projetos nos quais trabalhamos juntos.Aos inúmeros colaboradores que suportaram este projeto, especialmente as equipes LNNano-

show abstract

Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction

Cited by 5 publications

References 22 publications

Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography

Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography

High‐Resolution Scanning Transmission Electron Microscopy (HRSTEM) Techniques: High‐Resolution Imaging and Spectroscopy Side by Side

Modelamento de nanocristais pelo uso de técnicas avançadas de QHRTEM

Contact Info

Product

Resources

About