Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD

Chang, Tien-Chih; Chang, Ting Chang; Liu, Po–Tsun; Tsao, Shu Wei; Yeh, F. S.

doi:10.1016/j.tsf.2007.08.014

Cited by 11 publications

(7 citation statements)

References 5 publications

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“…Among the dielectric materials applied in TFTs, the passivation layer, in particular, should have a low dielectric constant to improve the performance of the TFT by a reduction of the capacitive coupling in the dielectric material 28–31. Figure 4 presents the variation of the dielectric constants of the CAEO and CAEO/DOX20 hybrimers as a function of frequency.…”

Section: Resultsmentioning

confidence: 99%

Photocurable transparent cycloaliphatic epoxy hybrid materials crosslinked by oxetane

Yang¹,

Jin²,

Kwak³

et al. 2012

J of Applied Polymer Sci

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Organic/inorganic hybrid materials (hybrimers) were fabricated by the photocationic polymerization of sol-gel-derived cycloaliphatic epoxy oligosiloxane (CAEO)/oxetane blends. The CAEO/oxetane blends showed faster photocationic polymerization rates compared to a CAEO resin. The CAEO/oxetane hybrimers showed a high crosslinking density and flexibility with the addition of oxetane monomer. The increased crosslinking density improved the insulation properties and lowered their dielectric constant. The CAEO/oxetane hybrimer with a substantial thickness of 2 mm showed high transparency (>90%) in the visible range. On the basis of these properties, the CAEO/oxetane hybrimers could be applied to various applications, including optics and display fields.

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Section: Resultsmentioning

confidence: 99%

Photocurable transparent cycloaliphatic epoxy hybrid materials crosslinked by oxetane

Yang¹,

Jin²,

Kwak³

et al. 2012

J of Applied Polymer Sci

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“…One such POSS, hydrogen silsesquioxane (HSQ), has attracted increasing interest in scientific research and technological innovation. [19][20][21][22][23][24] A new kind of thermosetting resin with terminal propargyl groups has recently been developed as a high-performance polymer owing to its good processability, advantageous dielectric and mechanical properties and excellent thermal stability, whether in air or in a nitrogen atmosphere. [25][26][27][28][29][30] This paper presents new modified BMI resins prepared from BMI, HSQ and dipropargyl aryl ethers.…”

Section: Introductionmentioning

confidence: 99%

Preparation and properties of bismaleimide resins modified with hydrogen silsesquioxane and dipropargyl ether and their composites

Huang

2010

Polym J

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A new type of modified bismaleimide (BMI) resins with good heat resistance and processing properties for advanced composites was developed. Modifiers hydrogen silsesquioxane (HSQ), dipropargyl ethers of bisphenol A, hexafluorobisphenol A, 4,4¢-dihydroxydiphenyl ether and resorcinol were used to modify 4,4¢-bismaleimidodiphenylmethane. The structure of the resins was verified by Fourier transform infrared spectrometry. The relationship between viscosity and temperature was used to characterize the processability of the resins. The curing behaviors of resins were investigated by a differential scanning calorimeter. The glass transition temperatures and thermal stabilities of cured resins were investigated by dynamic mechanical analysis and thermogravimetric analysis, respectively. The relationship between structures and properties of the resins was discussed, and the mechanical properties of the glass-fiber-fabric-reinforced composites were measured.

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“…However, this method has some disadvantages in terms of electric leakage current characteristics and reliability after post-treatment. Recently, inter-metal insulating materials such as methyl-silsesquioxane (MSQ), hydrogensilsesquioxane (HSQ), SilK, SiCOH, Aurora, etc., have been investigated as low k candidates [3,4]. Among them p-SiOCH film (k < 2.4) has particularly drawn attention due to its low k value and appropriate electrical properties [7].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Ultra Low-k SiOC(H) Film Deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD)

Kim¹

2012

Transactions on Electrical and Electronic Materials

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In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapordeposition (PECVD) were investigated through various characterization techniques. The results show that, with anincrease in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas therefractive index increases. This is mainly due to the incorporation of organic molecules with CH3 group into the Si-OSicage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 cm-1 correspondingto Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fastthermal annealing process, the leakage current density of the deposited films is in the order of 10-11 A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test

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Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD

Cited by 11 publications

References 5 publications

Photocurable transparent cycloaliphatic epoxy hybrid materials crosslinked by oxetane

Photocurable transparent cycloaliphatic epoxy hybrid materials crosslinked by oxetane

Preparation and properties of bismaleimide resins modified with hydrogen silsesquioxane and dipropargyl ether and their composites

Characterization of Ultra Low-k SiOC(H) Film Deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD)

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