Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

Yang, Yi; Cao, X. A.; Yan, Chunhui

doi:10.1109/ted.2008.923561

Cited by 117 publications

(93 citation statements)

References 15 publications

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“…Our non-isothermal model computations are consistent with the experimental findings by Yang et al [21]. Two injection current modes were used in [21].…”

Section: Led Structures and Simulation Parameterssupporting

confidence: 86%

“…Besides, it is observed that the spectrum of sample B does not exhibit peak shift, compared with that of the sample A at the same injection current. Yang et al [21] reported the noticeable red shift of the LED spectrum due to self-heating effect. But Figures 8 and 9 show the similar temperature profiles for samples A and B, leading to almost the same heat effect.…”

Section: Led Structures and Simulation Parametersmentioning

confidence: 99%

“…Two injection current modes were used in [21]. In the pulsed injection current mode (corresponding to the isothermal model), the spectrum exhibits a monotonic blue-shift over the entire current range.…”

Section: Led Structures and Simulation Parametersmentioning

confidence: 99%

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The effect of multi-quantum barrier structure on light-emitting diodes performance by a non-isothermal model

Wang

2012

Chin. Sci. Bull.

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A multi-quantum barrier structure is employed as the electron blocking layer of light-emitting diodes to enhance their performance. Using the non-isothermal multi-physics-field coupling model, the internal quantum efficiency, internal heat source characteristics, spectrum characteristics, and photoelectric conversion efficiency of light-emitting diodes are analyzed systematically. The simulation results show that: introducing multi-quantum barrier electron blocking layer structure significantly increases the internal quantum efficiency and photoelectric conversion efficiency of light-emitting diodes and the intensity of spectrum, and strongly ensures the thermal and light output stability of light-emitting diodes. These results are attributed to the modified energy band diagrams of the electron blocking layer which are responsible for the decreased electron leakage and enhanced carrier concentration in the active region.light-emitting diodes, internal quantum efficiency, multi-quantum barrier, spectrum intensity, electron leakage Citation:Wang T H, Xu J L, Wang X D. The effect of multi-quantum barrier structure on light-emitting diodes performance by a non-isothermal model.

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“…Our non-isothermal model computations are consistent with the experimental findings by Yang et al [21]. Two injection current modes were used in [21].…”

Section: Led Structures and Simulation Parameterssupporting

confidence: 86%

Section: Led Structures and Simulation Parametersmentioning

confidence: 99%

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The effect of multi-quantum barrier structure on light-emitting diodes performance by a non-isothermal model

Wang

2012

Chin. Sci. Bull.

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“…[1][2][3] In the past decade, multiple mechanisms have been proposed to explain the efficiency droop including Auger recombination induced by multi-particle interactions, [4][5][6][7][8] electron leakage due to poor hole injection and electron overflow, 9,10 carrier loss related to reduction or saturation of carrier localization, 11,12 and other processes including the density-activated defect recombination (DADR). 13,14 Some of these factors have been found to be tightly associated with the internal polarization field.…”

mentioning

confidence: 99%

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

Yang

Zhang

Shi

et al. 2013

Applied Physics Letters

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Abstract:We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of defect-related emission together with a significant reduction in bandedge emission efficiency. The experimental results can be well explained with the density-activated carrier diffusion from localized states to defect states. Such a scenario of density-activated defect recombination, as confirmed by the dependences of photoluminescence on the excitation photon energy and temperature, is a plausible origin of efficiency droop in a-plane InGaN quantum-well light-emitting diodes. a cfzhang@nju.edu.cn b jskwak@sunchon.ac.kr c mxiao@uark.edu

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“…There is also evidence that the material quality of the device plays a large role in governing the LED performance. Compositional changes and associated material quality differences in the InGaN for green-wavelength LEDs are believed to contribute to the efficiency drop seen at longer wavelengths [66]. InGaN is a notoriously difficult material to grow due to its low decomposition temperature, a reported miscibility gap [67], and increasing lattice mismatch with GaN as the indium content is increased.…”

Section: A Low Defect Density and Smooth Morphologymentioning

confidence: 99%

GaN Substrates for III-Nitride Devices

2010

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| Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several optoelectronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

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Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

Cited by 117 publications

References 15 publications

The effect of multi-quantum barrier structure on light-emitting diodes performance by a non-isothermal model

The effect of multi-quantum barrier structure on light-emitting diodes performance by a non-isothermal model

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

GaN Substrates for III-Nitride Devices

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