Investigation of the novel attributes of a double-gate graphene nanoribbon FET with AlN high-κ dielectrics

Owlia, Hadi; Keshavarzi, Parviz

doi:10.1016/j.spmi.2014.09.003

Cited by 22 publications

(9 citation statements)

References 19 publications

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“…They drew a conclusion that over-the-barrier ballistic transport was dominant at low doping, and on the contrary, under-the-barrier tunneling prevailed at high doping. [ 141 ] Other research showed theoretical studies on a novel dual-gate GNR FET with AlN serving as the gate dielectric, [ 142 ] uniaxial strain effect on dual-gate GNR FET by using analytical models, [ 143 ] and the transfer characteristics, output characteristics, on/off current ratio and high frequency performance of lightly doped drain (LDD) and source of double-material-gate (DM) GNR FETs according to the quantum model, [ 144 ] which exhibited the prospect of discrete controllable devices in theory. Though there are some diffi culties in the fabrication of dual-gate GNR FETs, there exists the potential of discrete circuit devices with different current amplifi cations, which are more tunable than the topgate structure, and these theoretical works manifest the bright application prospects of dual-gate GNR FETs.…”

Section: Reviewmentioning

confidence: 99%

Controllable Fabrication of Nanostructured Graphene Towards Electronics

Zeng

Xiao

Liu

et al. 2016

Adv Elect Materials

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applications, especially for fi eld-effect transistors (FETs) and sensors. [3][4][5][6] However, Klein tunneling in graphene and the related electron confi nement represent a real barrier to the development of graphene-based transistors, which results in a lack of band gap and the inability to confi ne electrons. [ 7 ] Therefore, although high mobility and high current are essential for high-frequency applications, this intrinsically high off-state current and low on/off ratio hinder the potential applications of graphene in FETs operated at room temperature.Numerous efforts have been devoted to inducing a band gap in graphene by chemical modifi cation, [8][9][10] the application of a perpendicular electric fi eld to bilayer graphene, [11][12][13] and other methods. [ 14 ] Nevertheless, these methods are uncontrollable and the as-constructed devices usually exhibit poor electronic performance. The fabrication of nanostructured graphene can be a quite effective way to introduce a bandgap. [ 15 ] Generally, nanostructured graphene refers to a graphene structure of intermediate size between microscopic and molecular, in which one dimension must be at the nanoscale, including graphene nanoribbons (GNRs), graphene nanomeshes, graphene nanodisks, graphene quantum dots, graphene nanoheterostructures, and so on. Among those graphene nanostructures, GNRs are the most popular and potentially useful ones for electronic applications; therefore, we will mainly concentrate on the progress made in GNRs. The narrowing of graphene fi lm into stripes with widths <10 nm was studied both theoretically and experimentally to create an energy band in the electronic structure of graphene due to quantum confi nement, which is the most effective way to open the band gap of graphene. In fact, the band gap is determined by the states of the edge and the width of the nanoribbon. [ 15 ] Tight binding (TB) calculations predict that GNRs terminated with 'armchair' edges can be either metallic or semi-conducting depending on their widths. Nanoribbons terminated with 'zigzag' edges are always metallic regardless of their widths. In order for the GNRs to open band gaps of a similar order as commonly used semiconducting materials (e.g. Si (1.14 eV), GaAs (1.43 eV)) widths of less than 2 nm are likely to be necessary. [ 16 ] Therefore, as the fi rst step to implement the electronic applications, nanostructured graphene must be directly synthesized Due to graphene's exceptional electronic properties, strong efforts are being made to push forward its nanoelectronic applications. However, the gapless band structure of truly 2D graphene makes it unsuitable for direct use in graphene-based fi eld-effect transistors (FETs), which is one of the most widely discussed graphene applications in electronics. Therefore, in order to accomplish graphene's applications in semiconducting nanoelectronics, it is necessary to produce nanostructured graphene with suffi ciently narrow characteristic width, thus introducing further confi nement and opening a reasonably la...

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Section: Reviewmentioning

confidence: 99%

Controllable Fabrication of Nanostructured Graphene Towards Electronics

Zeng

Xiao

Liu

et al. 2016

Adv Elect Materials

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“…The large-scale and cost-efficient production of thin AlN dielectric layer with good reproducibility and uniformity [30,31] can result in small equivalent oxide thickness (EOT) while reducing phonon scattering in epitaxial graphene, enabling near ballistic carrier transport in short channel GNR FET [32]. The double gate geometry with high- dielectric constant offers large gate electrostatic control and consequently large insulator capacitance, which lead to the operation of the GNR FET close to QCL.…”

Section: Device Structurementioning

confidence: 99%

Scaling Effects on Static Metrics and Switching Attributes of Graphene Nanoribbon FET for Emerging Technology

Banadaki

Srivastava

2015

IEEE Trans. Emerg. Topics Comput.

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In this paper, we have investigated the static metrics and switching attributes of graphene nanoribbon field effect transistors (GNR FETs) for scaling the channel length from 15 nm down to 2.5 nm and GNR width by approaching the ultimate vertical scaling of oxide thickness. We have simulated the double gate GNR FET by solving a numerical quantum transport model based on self-consistent solution of the 3D Poisson equation and 1D Schrödinger equation within the non-equilibrium Green's function formulism. The narrow armchair GNR, e.g. (7,0), improved the device robustness to short channel effects, leading to better OFF-state performance considering OFF-current, ION/IOFF ratio, subthreshold swing and drain-induced barrierlowering. The wider armchair GNRs allow the scaling of channel length and supply voltage resulting better ON-state performance such as the larger intrinsic cut-off frequency for the channel length below 7.5 nm at smaller gate voltage as well as smaller intrinsic gate-delay time with the constant slope for scaling the channel length and supply voltage. The wider armchair GNRs, e.g. (13,0), have smaller power-delay product for scaling the channel length and supply voltage, reaching to ~0.18(fJ/µm).

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“…Therefore, a new preparation process of DG-FET based on monolayer graphene is systematically put forward in this paper, which exhibits extraordinary properties [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

A New Preparation Process of Double-gate FETs Based on Monolayer Graphene Nanoflakes

Bai¹,

Zhu²,

Yang³

et al. 2017

Proceedings of the 3rd Annual International Conference on Advanced Material Engineering (AME 2017)

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Abstract:A new preparation process to product double-gate field effect transistor (DG-FET) of monolayer graphene nanoflakes, fabricated by mechanical exfoliation, was systematically studied in this paper. The graphene DG-FETs are bipolar and possess high gate modulation (On/Off ratio is large), and higher regulation accuracy, which is double-gate regulation. These results showed the extraordinary performance of the double-gate FETs based on monolayer graphene, which might open a new road to develop graphene-based material in the application of double-gate FETs. IntroductionSince graphene has been discovered by Geim and Novoselov in 2004[1], this two-dimensional (2D) material with typically extraordinary properties has attracted extensive research in the last few years [2][3][4][5]. Disappointingly, low On/Off ratio and low regulation accuracy has immensely restricted the application of this star material in logic transistor field and optoelectronics [6,7]. Fortunately, DG-FET is an effective way to solve the problem, which has extraordinary properties. So it is necessary to expand a better path to produce the DG-FET.Although the concept of DG-FET has been put forward for a long time [9][10][11][12][13][14][15][16], few researchers can stably produce DG-FET. Therefore, a new preparation process of DG-FET based on monolayer graphene is systematically put forward in this paper, which exhibits extraordinary properties [16][17][18][19][20].Results indicate that the graphene DG-FET, fabricated by the new way, has a larger On/Off ratio and higher regulation accuracy, compared to traditional graphene FETs and graphene DG-FETs are produced by other way. More importantly, we open up a new road to produce monolayer graphene DG-FET stably and normatively. Accordingly, this graphene DG-FET may possibly be more promising in the application of FETs.

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Investigation of the novel attributes of a double-gate graphene nanoribbon FET with AlN high-κ dielectrics

Cited by 22 publications

References 19 publications

Controllable Fabrication of Nanostructured Graphene Towards Electronics

Controllable Fabrication of Nanostructured Graphene Towards Electronics

Scaling Effects on Static Metrics and Switching Attributes of Graphene Nanoribbon FET for Emerging Technology

A New Preparation Process of Double-gate FETs Based on Monolayer Graphene Nanoflakes

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