Investigation of the nucleation and growth of SiC nanostructures on Si

Scharmann, F.; Maslarski, P.; Attenberger, W.; Lindner, J.K.N.; Stritzker, B.; Stauden, Thomas; Pezoldt, Jörg

doi:10.1016/s0040-6090(00)01476-0

Cited by 22 publications

(14 citation statements)

References 15 publications

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“…62 For 3C-SiC, σ is 1.74 J/m 2 and V is 12.5 cm 3 /mol. 63 As illustrated in the inset of Figure 8, the critical nuclei size increases from 0.6 to 1.9 nm with the deposition temperature increasing from 950 to 1150°C. Therefore, it can be expected that more cubic stacking sequences would be formed in SiC nuclei.…”

Section: Discussionmentioning

confidence: 90%

“…According to the classic nucleation theory, relationship between SiC critical nuclei size ( d ) and deposition parameters can be estimated from Thompson Equation :

d = \frac{2 σ V}{R T \ln S}

where σ is the surface energy, V is the molar volume, T is the deposition temperature, S is the supersaturation of SiC in CVD process and can be calculated by Hwang's method . For 3C‐SiC, σ is 1.74 J/m 2 and V is 12.5 cm 3 /mol . As illustrated in the inset of Figure , the critical nuclei size increases from 0.6 to 1.9 nm with the deposition temperature increasing from 950 to 1150°C.…”

Section: Discussionmentioning

confidence: 99%

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Microstructure and mechanical property of high growth rate SiC via continuous hot‐wire CVD

Liu

Yang

et al. 2019

J Am Ceram Soc

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An average growth rate of SiC at 3.4‐28.5 μm/min can be achieved via continuous hot‐wire CVD method with input powers of 300‐380 W. Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS) analysis, and X‐ray diffraction (XRD) method, combined with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied to investigate the microstructure of deposits. At 300 W, amorphous SiC and Si were main products in deposit, which were rapidly replaced by crystallite SiC containing high density stacking faults at 340 W and above. Moreover, with the grain size of SiC increasing from ~25 to ~420 nm, the stacking faults probability decreasing from 0.179 to 0.125, as well as the surface morphology changed from loose‐packed granules to a well‐defined faceted structure with strong (111) texture. Structural changes led to the increase of deposit's Young's modulus from 266.3 to 341.5 GPa, and the mean tensile strength of SiC filament from 1.57 to 3.03 GPa. The successive growth of W/SiC interfacial layer above 360 W resulted in the reduction in mean tensile strength and Weibull moduls of SiC monofilaments, which agrees with the prediction from critical interfacial layer thickness theory.

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Section: Discussionmentioning

confidence: 90%

“…According to the classic nucleation theory, relationship between SiC critical nuclei size ( d ) and deposition parameters can be estimated from Thompson Equation :

d = \frac{2 σ V}{R T \ln S}

Section: Discussionmentioning

confidence: 99%

Microstructure and mechanical property of high growth rate SiC via continuous hot‐wire CVD

Liu

Yang

et al. 2019

J Am Ceram Soc

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“…In the latter two non-matching cases irregular distributed islands are formed [13]. Previous studies [7,13] have shown that if the growth temperature is increased the SiC island density decreases, i.e., the island separation increases (Fig. 2).…”

Section: Resultsmentioning

confidence: 80%

Lateral alignment of SiC dots on Si

Cimalla

Pezoldt

Stauden

et al. 2004

phys. stat. sol. (c)

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An alignment of self-assembled SiC dots grown by molecular beam epitaxy on Si substrates is demonstrated. Atomic force microscopy was applied showing the possibility to control the lateral ordering in linear chains and in dense dot arrays. The large lattice mismatch between Si and SiC of 20% stimulates a three-dimensional nucleation on the substrate. The formation of well ordered monoatomic, and biatomic steps as well as step bands on (100) and (111) Si was used, offering the advantage to not need additional processing steps to define the alignment. However, during the SiC nucleation on Si the substrate participates in the reaction to SiC by lateral Si diffusion resulting in an unstable surface during the growth. Thus, the reproducible control of the nucleation sites independent on the movement of the steps during the growth is a critical issue to achieve the lateral alignment.

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“…Based on this and the AES results we may believe that such a process leads to a carbonization of the silicon surface. There is a firm evidence in the literature that an interaction between a hot substrate and gaseous hydrocarbons [7], graphite [8] and C 60 [9] results in formation of SiC.…”

Section: Resultsmentioning

confidence: 99%