Investigation of the processes of charge transfer and charge accumulation in As2Se3 amorphous layers prepared by different methods

Abstract

The influence of the method used for preparing As 2 Se 3 amorphous layers on the processes of charge transfer and charge accumulation in these structures is studied. Different physical parameters, such as the contact capacitance, the width of the charge accumulation region, and the time of transit of charge carriers through the samples, which characterize the occurring electronic processes, are determined for the layers under investigation.

Dielectric Relaxation and Charge Transfer in Amorphous MoS2 Thin Films

“…This method was successfully used in the study of polarization processes in systems with varying degrees of structural disorder (ceramics, polymers, glasses, liquid crystals, semiconductors, and biological systems). [ 15,16 ] It allowed one to monitor the polarization of a material over a wide range of frequencies and temperatures. By analyzing the dielectric spectra obtained as a result of the measurements, it was possible to determine various dielectric and thermodynamic parameters of the systems under study, such as the relaxation time τ of relaxators and the activation energy of the relaxation process E a .…”

Недебаевский Диэлектрический Отклик В Монолитных Слоях Стеарата Серебра

“…Данный метод успешно применяется при изучении электронных процессов в системах с различной степенью структур-ной неупорядоченности [9][10][11]. Установка " Concept 41" включает в себя плату сопряжения с персональным ком-пьютером и программное обеспечение для сбора данных.…”

Synthesis and Studies of Electro-Deposited Yttrium Arsenic Selenide Nanofilms for Opto-Electronic Applications

“…With a focus on PCM devices, much greater speed and lower power drain during data storage, processing, and information dissemination are attained when circuits are fabricated with chalcogenide-based materials [ 4 ]. Several techniques have been employed to synthesize these materials; they include RF magnetron sputtering [ 15 ], melt-quenching [ 16 ], pulsed laser deposition (PLD) [ 17 ], thermal evaporation [ 18 ], spin-coating [ 19 ], among others.…”