Investigation of the properties of superconducting niobium nitride films

Pan, V. M.; Gorishnyak, V.P.; Rudenko, È. M.; Shaternik, V.E.; Belous, M. V.; Koziychuk, S. A.; Korzhinsky, F.I.

doi:10.1016/0011-2275(83)90146-7

Cited by 25 publications

(7 citation statements)

References 6 publications

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“…The resistivity of films at both 20 K and 300 K as a function of substrate temperature is displayed in Figure 6(b). All values of resistivity are within the range typically observed for NbN thin films [44][45][46]. As a result of the greater residual-resistivity ratio (RRR) for films grown at high temperatures, we see that the resistivity at 20 K shows a general trend of decreasing resistivity at 20 K as substrate temperature increases.…”

Section: Resultssupporting

confidence: 73%

Growth windows of epitaxial $\textrm{Nb}_x\textrm{N}$ films on c-plane sapphire and their structural and superconducting properties

Wright¹,

Xing²,

Jena³

2022

Preprint

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NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux effect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in different conditions. In a novel finding, we demonstrate that atomically flat and highly crystalline β-Nb2N films can be grown at substrate temperatures of 1100 • C or higher, and that the superconducting critical temperature of phase pure β-Nb2N films is 0.35 K < Tc < 0.6 K, based on measurements of films grown at different substrate temperatures.

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Section: Resultssupporting

confidence: 73%

Growth windows of epitaxial $\textrm{Nb}_x\textrm{N}$ films on c-plane sapphire and their structural and superconducting properties

Wright¹,

Xing²,

Jena³

2022

Preprint

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“…It has exhibited itself as switching from a superconducting state with low dissipation to a finite-conductance regime which, in our opinion, can be initiated by emergence of an extra PS center in the interlayer. The latter effect may be caused by a nonequilibrium population of energy levels in the middle film due to multiple Andreev reflections of quasiparticles which induces the appearance of a phase slip region [22,23].…”

Section: Discussionmentioning

confidence: 99%

Dissipation effects in superconducting heterostructures with tungsten nanorods as weak links

Shaternik

Shapovalov

Suvorov

et al. 2018

Low Temperature Physics

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Thin-film hybrid heterostructures formed by superconducting molybdenum-rhenium-alloy films with a critical temperature of about 9 K and nanoscale silicon-based semiconducting interlayers with metallic tungsten nanorods have been fabricated and studied. Current-voltage characteristics of the junctions were measured at 4.2 K and under influence of 11 GHz microwave irradiation. The evidence of a quasi-one-dimensional transport through the tungsten weak links disrupted by phase-slip centers was revealed in MoRe/doped Si/MoRe trilayers under irradiation by a high-frequency field. Also, measured current-voltage characteristics of five-layer MoRe/doped Si/MoRe/doped Si/MoRe devices exhibit a strong influence of a dissipation state in the MoRe interlayer. Namely, the switching from a superconducting state with low dissipation to a finite-conductance regime can be initiated by the emergence of an extra phase-slip center in the MoRe interlayer. Possible physical mechanisms of the two findings are discussed.

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“…L'échantillon (1) possède un gap d'énergie A, = 0394(0)/kTc égal à 2,23, tandis que celui de l'échantillon (2) est d'environ 1,70, ceci pour (Tc/T) > 2. Ces valeurs sont très proches de celles données dans d'autres travaux, où le gap a été mesuré par effet tunnel [5][6][7][8], elles correspondent pour l'échantillon (1) à un couplage fort, tandis qu'on retrouve bien un couplage faible pour les films très minces. Isagawa par contre a trouvé une valeur nettement plus faible, inférieure à 1, qu'il a attribuée à l'existence de zones à conduction non métallique situées aux joints de grains [9].…”

Section: Résultats Et Discussionunclassified

“…Ceci est donc un moyen pour déterminer Tc , par la méthode des moindres carrés. Dans le cas présent nous trouvons : Tr = 15 K, et la pente est de A Fo = 9 GHz (mode TEO ln) et pour L = 43,25 mm, la relation (8) [Surface temperature and transition temperature measured for various NbN samples.] En rapportant nos mesures de 039403BB à une valeur arbitraire T = 7 K (y = 1,025), nous portons 039403BB en fonction de y dans la figure 7.…”

Section: Résultats Et Discussionunclassified

Elaboration et caractérisation en hyperfréquences de films minces de NbN

Mbaye¹,

Tu²,

Viet³

et al. 1985

Rev. Phys. Appl. (Paris)

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Des films minces de nitrure de niobium, déposés par pulvérisation réactive à cathode magnétron en courant continu sur des substrats de niobium, ont été caractérisés en hyperfréquences (10 GHz) pour déterminer la résistance de surface et la profondeur de pénétration des champs, en fonction de la température et de l'épaisseur des dépôts. La méthode expérimentale utilisée permet d'étudier plusieurs échantillons au cours d'une même expérience. Les résultats obtenus confirment la supériorité de la technique de dépôt utilisé sur les techniques classiques, et sont en très bon accord avec les prévisions théoriques, ainsi qu'avec les résultats obtenus par d'autres méthodes de mesure

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Investigation of the properties of superconducting niobium nitride films

Cited by 25 publications

References 6 publications

Growth windows of epitaxial $\textrm{Nb}_x\textrm{N}$ films on c-plane sapphire and their structural and superconducting properties

Growth windows of epitaxial $\textrm{Nb}_x\textrm{N}$ films on c-plane sapphire and their structural and superconducting properties

Dissipation effects in superconducting heterostructures with tungsten nanorods as weak links

Elaboration et caractérisation en hyperfréquences de films minces de NbN

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