2008
DOI: 10.1016/j.jallcom.2007.01.065
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Investigation of the R2Te3–M2Te–PbTe (R=Tb, Dy; M=Cu, Ag) systems at 770K

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Cited by 7 publications
(1 citation statement)
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“…12 A higher carrier concentration was observed by Lin et al for TmCuTe 2 crystallizing in a different crystal structure (DyCuTe 2 structure type) 13,14 from TmAgTe 2 , leading to relatively high zT of 0.81 at 745 K. 15 The substitution of Ag with Cu might lead to an increase in carrier concentration due to intrinsic defects generally found for copper chalcogenides (Cu 2Àx Y (Y ¼ S, Se, Te)). [16][17][18][19][20][21] Apart from copper vacancies, copper chalcogenides have attracted renewed attention mainly due to superionic Cu atoms with liquid-like mobility leading to extremely low thermal conductivity.…”
Section: Introductionmentioning
confidence: 93%
“…12 A higher carrier concentration was observed by Lin et al for TmCuTe 2 crystallizing in a different crystal structure (DyCuTe 2 structure type) 13,14 from TmAgTe 2 , leading to relatively high zT of 0.81 at 745 K. 15 The substitution of Ag with Cu might lead to an increase in carrier concentration due to intrinsic defects generally found for copper chalcogenides (Cu 2Àx Y (Y ¼ S, Se, Te)). [16][17][18][19][20][21] Apart from copper vacancies, copper chalcogenides have attracted renewed attention mainly due to superionic Cu atoms with liquid-like mobility leading to extremely low thermal conductivity.…”
Section: Introductionmentioning
confidence: 93%