Investigation of the resistive switching behavior in Ni/HfO&lt;inf&gt;2&lt;/inf&gt;-based RRAM devices

González, M.B.; Acero, M.C.; Beldarrain, O.; Zabala, M.; Campabadal, F.

doi:10.1109/cde.2015.7087499

Cited by 11 publications

(16 citation statements)

References 12 publications

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“…Voltages at which samples change from HRS to LRS (V SET ) and from LRS to HRS (V RESET ) and current at LRS (I LRS , I ON ) and at HRS (I HRS , I OFF ) are also indicated. In these samples, which present both bipolar and unipolar behavior, the unipolar type with negative voltage polarity to trigger set and reset processes gives the best endurance results of the RS phenomenon [30], [31]. More than 3000 cycles of negative switching can be reached [30].…”

Section: Memristors Descriptionmentioning

confidence: 99%

“…In these samples, which present both bipolar and unipolar behavior, the unipolar type with negative voltage polarity to trigger set and reset processes gives the best endurance results of the RS phenomenon [30], [31]. More than 3000 cycles of negative switching can be reached [30]. During SET process, current was limited to 250µA to guarantee good functionality of the memristor.…”

Section: Memristors Descriptionmentioning

confidence: 99%

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Experimental Verification of Memristor-Based Material Implication NAND Operation

Maestro-Izquierdo

Martín-Martínez

Crespo-Yepes

et al. 2019

IEEE Trans. Emerg. Topics Comput.

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Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more specific and differential logic functions is the material implication logic also named as IMPLY logic. Many papers have been published in this framework but few of them are related with experimental works using real memristor devices. In the paper authors show the verification of the IMPLY function by using Ni/HfO 2 /Si manufactured devices and laboratory measurements. The proper behavior of the IMPLY structure (2 memristors) has been shown. The paper also verifies the proper operation of a two-steps IMPLY-based NAND gate implementation, showing the electrical behavior of the circuit in a cycling operation. A new procedure to implement a NAND gate that requires only one step is experimentally shown as well.

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Section: Memristors Descriptionmentioning

confidence: 99%

Section: Memristors Descriptionmentioning

confidence: 99%

Experimental Verification of Memristor-Based Material Implication NAND Operation

Maestro-Izquierdo

Martín-Martínez

Crespo-Yepes

et al. 2019

IEEE Trans. Emerg. Topics Comput.

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“…Regarding logic functionality, whereas in standard logic gates different voltage levels are related to the two binary states, in the case of the IMPLY gate, the binary states are associated to different memristor resistive states (or the current values for this resistance states [18]. These devices show better performance operating as negative unipolar RS devices [18], [19], i.e. applying negative voltages to provoke the change between both memristor resistance states.…”

Section: Imply Gate Performancementioning

confidence: 99%

“…Characterization studies of the HfO 2 -based memristors have been performed in [7], [18] and [19]. In [18] and [19] the cycleto-cycle variability of I ON and I OFF is analyzed.…”

Section: Imply Gate Performancementioning

confidence: 99%

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Experimental Time Evolution Study of the HfO₂-Based IMPLY Gate Operation

Maestro-Izquierdo

Martín-Martínez

Crespo-Yepes

et al. 2018

IEEE Trans. Electron Devices

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Abstract-. In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. In the literature, the IMPLY operation has been widely simulated but most of the efforts have been just focused on accomplishing its truth table, only considering the initial and final states of the gate. However, a complete understanding of the time evolution between states is still missing and barely reported yet. In this work, the time evolution of memristor involved in an IMPLY gate are studied in detail for every case of the gate. Furthermore, the impact on IMPLY gate operation of the internal resistor connected in series with the memristors of the IMPLY gate is included.

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Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

Khan,

Rehman,

Iqbal

et al. 2023

ACS Appl. Electron. Mater.

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Due to the fast evolution of information technology, high-speed and scalable memory devices are being investigated for data storage and datadriven computation. Resistive switching random access memory (RRAM) is one of the very popular types of memristors, because of its quick program/erase speed and high density as a result of its simple two-terminal structure, low power consumption, and low cost of fabrication. In this review, the market for promising memristor-based memories for smart systems is examined. The switching memory devices are described and classified according to their I−V behavior to underline the physical switching mechanisms. The various filament mechanisms of the RRAM memristor, including the valence change mechanism (VCM), electrochemical metallization mechanism (ECM), and thermochemical mechanism (TCM), are especially highlighted in various structures. The performance of resistive switching devices with different reported electrode materials and resistive layers is summarized. This study provides a detailed review of materials of the different deposition techniques used for surface modification and coating. The two major areas of interest, physical and chemical vapor deposition techniques and the influence parameter on the resistive switching, are discussed in detail. The prospective applications of RRAM memristors to various fields such as security, neuromorphic computing, and non-volatile logic systems for artificial intelligence are addressed briefly as well as the future outlook.

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Investigation of the resistive switching behavior in Ni/HfO<inf>2</inf>-based RRAM devices

Abstract: In this work, a systematic study of the electrical properties and the cycle-to-cycle variability in Ni/HfO 2 -based RRAM devices is presented. Besides the resistive switching behavior, attention is also given to the impact of temperature on device stability and variability.

Cited by 11 publications

References 12 publications

Experimental Verification of Memristor-Based Material Implication NAND Operation

Experimental Verification of Memristor-Based Material Implication NAND Operation

Experimental Time Evolution Study of the HfO₂-Based IMPLY Gate Operation

Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

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Investigation of the resistive switching behavior in Ni/HfO<inf>2</inf>-based RRAM devices

Abstract: In this work, a systematic study of the electrical properties and the cycle-to-cycle variability in Ni/HfO 2 -based RRAM devices is presented. Besides the resistive switching behavior, attention is also given to the impact of temperature on device stability and variability.

Cited by 11 publications

References 12 publications

Experimental Verification of Memristor-Based Material Implication NAND Operation

Experimental Verification of Memristor-Based Material Implication NAND Operation

Experimental Time Evolution Study of the HfO2-Based IMPLY Gate Operation

Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

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Experimental Time Evolution Study of the HfO₂-Based IMPLY Gate Operation