Investigation of the solar cell emitter quality by LBIC-like image techniques

Litvinenko, S. V.; Ilchenko, Leonid M.; Kaminski, A.; Kolenov, S.O.; Laugier, A.; Смирнов, Е. Н.; Strikha, V. I.; Skryshevsky, V. A.

doi:10.1016/s0921-5107(99)00382-7

Cited by 16 publications

(10 citation statements)

References 8 publications

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“…Investigation of this optical loss by the thickness of glass walls was further elucidated experimentally using an independent technique by LBIC measurement on cylindrical TCO‐less DSSC, and results have been shown in Figure . LBIC measurement technique is well known for its capability for mapping of spatial distribution of the induced photocurrent and has been widely used for characterization and reliability of solar cells . In the present investigation, LBIC measurement was performed by measuring output current as a function of radial and axial lengths of the cylindrical DSSC after irradiation with He–Ne laser light (633 nm), where intensity of the laser light was controlled to be similar to that of intensity of solar irradiation at AM 1.5 condition using a neutral density filter.…”

Section: Resultsmentioning

confidence: 99%

Transparent conductive oxide‐less three‐dimensional cylindrical dye‐sensitized solar cell fabricated with flexible metal mesh electrode

Usagawa

Pandey

Ogomi

et al. 2011

Progress in Photovoltaics

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A cylindrical transparent conductive oxide‐less dye‐sensitized solar cell (DSSC) consisting of glass tube/stainless steel mesh–TiO2–dye/gel electrolytes/Pt‐Ti rod having capability of self‐light trapping is reported. Replacing the glass tube with heat‐shrinkable tube to reduce electrolyte gap and optical loss due to light transmission and reflection led to the enhancement in the power conversion efficiency from 2.61% to 3.91%. Profiling of the current distribution measured by laser beam‐induced current exhibited nearly the same current in the axial and radial directions, suggesting that light reflection on a cylindrical DSSC does not affect the efficiency seriously. Optimized best DSSC in this novel device architecture gave a short‐circuit current density of 11.94 mA/cm2, an open‐circuit voltage of 0.71 V and a fill factor of 0.66 leading to the power conversion efficiency of 5.58% at AM 1.5 under simulated solar irradiation. Copyright © 2011 John Wiley & Sons, Ltd.

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Section: Resultsmentioning

confidence: 99%

Transparent conductive oxide‐less three‐dimensional cylindrical dye‐sensitized solar cell fabricated with flexible metal mesh electrode

Usagawa

Pandey

Ogomi

et al. 2011

Progress in Photovoltaics

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“…A scheme of the sensor structure was displayed in [ 9 ]. The photocurrent of such solar cell contacted with different liquids was obtained by the conventional light beam-induced current (LBIC) technique [ 11 ]. The structures were illuminated from the rear side by modulated red light ( λ = 0.63 μm) from He–Ne laser (at modulation frequency of 1276 Hz) to obtain 2D map of light-induced signal.…”

Section: Methodsmentioning

confidence: 99%

Optical Addressing Electronic Tongue Based on Low Selective Photovoltaic Transducer with Nanoporous Silicon Layer

et al. 2016

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The electronic tongue based on the array of low selective photovoltaic (PV) sensors and principal component analysis is proposed for detection of various alcohol solutions. A sensor array is created at the forming of p-n junction on silicon wafer with porous silicon layer on the opposite side. A dynamical set of sensors is formed due to the inhomogeneous distribution of the surface recombination rate at this porous silicon side. The sensitive to molecular adsorption photocurrent is induced at the scanning of this side by laser beam. Water, ethanol, iso-propanol, and their mixtures were selected for testing. It is shown that the use of the random dispersion of surface recombination rates on different spots of the rear side of p-n junction and principal component analysis of PV signals allows identifying mentioned liquid substances and their mixtures.

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“…The structure surface was illuminated with light with the wavelength = 532 nm. For this purpose, a semiconductor laser equipped with a system of acoustoelectric positioning was applied [21].…”

Section: Model Of a Sensor Structure Based On The Silicon --Junctionmentioning

confidence: 99%

Physical Properties of Silicon Sensor Structures with Photoelectric Transformation on the Basis of “Deep” p–n-Junction

2017

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A capability to produce effective sensor structures on the basis of "deep"silicon junction has been substantiated. If the incident light is strongly absorbed by this junction, the photocurrent through it is shown to substantially depend on the recombination characteristics and the charge state of the illuminated surface, provided that the junction parameters are optimal. The depth of the illuminated region is demonstrated to exceed the diffusion length of minority charge carriers. It is found that the larger diffusion length of minority charge carriers corresponds to stronger changes of the photocurrent generated by the illuminated surface area. A possibility to transform the junction from a photodetector into an effective chemical sensor is verified by numerical calculations. The physical mechanisms relating the changes in the effective surface recombination rate and the absorption of polar molecules are discussed. The sensor properties of suggested silicon junctions are analyzed for a number of analytes. Their suitability for the creation of selective chemical sensors (electronic noses) is demonstrated experimentally.

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Investigation of the solar cell emitter quality by LBIC-like image techniques

Cited by 16 publications

References 8 publications

Transparent conductive oxide‐less three‐dimensional cylindrical dye‐sensitized solar cell fabricated with flexible metal mesh electrode

Transparent conductive oxide‐less three‐dimensional cylindrical dye‐sensitized solar cell fabricated with flexible metal mesh electrode

Optical Addressing Electronic Tongue Based on Low Selective Photovoltaic Transducer with Nanoporous Silicon Layer

Physical Properties of Silicon Sensor Structures with Photoelectric Transformation on the Basis of “Deep” p–n-Junction

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