Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In<sub>2</sub>O<sub>3</sub>) nanowire phase change random access memory

Jin, Bo; Lim, Taekyung; Ju, Sanghyun; Latypov, Marat I.; Pi, Dong-Hai; Kim, Hyoung Seop; Meyyappan, M.; Lee, Jeong-Soo

doi:10.1063/1.4868537

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…Controlled growth of growth of single-crystalline (In x Ga 1−x ) 2 O 3 -based nanostructures with indium content from 0.05 to 0.9 is still a big challenge. A fundamental issue is the large solid-phase miscibility gap in (In x Ga 1−x ) 2 O 3 alloys with indium content from 0.05 to 0.9, 16,[31][32][33][34][35][36][37][38][39] due to the large difference in crystal structures, e.g. interatomic spacing, coordinated sites, etc., between β-Ga 2 O 3 and bcc-In 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

AlInGaN nanocrystal seeded growth of weak p-type β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts

Tian

et al. 2023

CrystEngComm

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Section: Introductionmentioning

confidence: 99%

AlInGaN nanocrystal seeded growth of weak p-type β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts

Tian

et al. 2023

CrystEngComm

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“…18 However, according to other studies, 10,15 the resistance drift is related to the stress relaxation, leaving this as an unresolved issue. As the PCM dimension becomes smaller (such as 20∼40 nm thin film, 16,19,20 ∼40 nm NW formation 9,15,21,22 or even under 10 nm size 23 ), the PCM region would be sufficiently small enough to undergo complete phase transition, and thus the external effect from ELM is more critical than in the case of conventional large dimension PCRAM devices reported to date. Therefore, studies on stress relaxation correlated to ELM are needed.…”

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confidence: 98%

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

Jin

Kim

et al. 2014

AIP Advances

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Phase change random access memory (PCRAM) devices exhibit a steady increase in resistance in the amorphous phase upon aging and this resistance drift phenomenon directly affects the device reliability. A stress relaxation model is used here to study the effect of a device encapsulating layer material in addressing the resistance drift phenomenon in PCRAM. The resistance drift can be increased or decreased depending on the biaxial moduli of the phase change material (YPCM) and the encapsulating layer material (YELM) according to the stress relationship between them in the drift regime. The proposed model suggests that the resistance drift can be effectively reduced by selecting a proper material as an encapsulating layer. Moreover, our model explains that reducing the size of the phase change material (PCM) while fully reset and reducing the amorphous/crystalline ratio in PCM help to improve the resistance drift, and thus opens an avenue for highly reliable multilevel PCRAM applications.

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“…[6,7] This is a widely used technology, but requires exotic and relatively expensive materials. Exploiting the properties of different crystal structures, whether that is difference in optical, thermal, or magnetic properties, has been demonstrated in more earth abundant materials, particularly transition metal chalcogenide compounds, such as FeSx [8], InSe [9], and doped In2O3 [10,11]. Despite the success in some commercial applications, there is still a large knowledge gap in fundamental understanding of the materials science aspects of crystal phase transformations.…”

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confidence: 99%

Phase transformation studies of metal oxides to dichalcogenides in 1-d structures.

Cummins¹,

Ray²

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Recently, the use of materials with nanoscale morphologies has expanded, particularly with applications in energy conversion, catalysis, and energy storage. One drawback to single crystalline nanomaterials, especially 1D nanowires, is the difficulty in synthesizing these compounds, as the material chemistry becomes more complicated.Metal oxide nanowires can be synthesized easily and can be produced in relatively large quantities. However, more complex materials, such as metal chalcogenides, cannot typically be synthesized using facile methods, and currently very few techniques involve scalable methods. Phase transformation of metal oxides nanowires to form metal sulfides and selenides by gas-solid reactions is one viable route to scalable chalcogenide production. However, the transformation of 1D materials from oxides to other compositions using gas-solid reactions has not been well studied and the underlying mechanisms involved with phase transformation are minimally understood. A fundamental understanding of how gas phase reactants interact with nanomaterials is critical to not only making new materials on the nanoscale, but also allowing the engineering and optimization of nanomorphologies for functional applications.v Iron sulfide and molybdenum sulfide nanowires are chosen as the two model materials to investigate crystal phase transformations in 1D systems.In reaction of Fe2O3 single crystal nanowires with H2S gas to form FeS, the formation of a hollow nanotube morphology is observed, caused by unequal diffusion of the cation and anion, resulting in the accumulation of voids. These findings suggest that the reactant (sulfur) does not diffuse into the nanostructure; rather, iron atoms diffuse outward and react on the surface. The resulting FeS compound also has interesting optical absorption properties that could be of use in solar applications.The conversion of MoO3 nanowires in an attempt to form MoS2 nanowires resulted in a MoS2/MoOx shell/core nanowire morphology, with strong diffusion limits in formation of the sulfide shell. In this case, the sulfur diffusion through the MoS2 shell limits the reaction, leading to core-shell morphology.The MoS2/MoOx shell/core architecture shows considerable activity for electrocatalysis of the hydrogen evolution reaction due to the high surface area architecture for edge plane sites. Chemical intercalation of the MoS2 shell shows a further change in the crystal morphology and an improvement in catalytic activity. Reducing agents (hydrazine) are also investigated in attempts to chemically modify the MoS2 surface, changing the surface charge carrier concentrations. This is the first report of the effect of hydrazine in any chalcogenide system and the hydrazine treated MoS2 nanowire architecture shows one of the best electrocatalytic performance to date. The chemical modifications of MoS2 1D structures suggest the electrocatalytic activity can be tuned and corresponding architectures could be synthesized through phase transformation by design. These experiments help to d...

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Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In₂O₃) nanowire phase change random access memory

Cited by 5 publications

References 18 publications

AlInGaN nanocrystal seeded growth of weak p-type β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts

AlInGaN nanocrystal seeded growth of weak p-type β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

Phase transformation studies of metal oxides to dichalcogenides in 1-d structures.

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Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory

Cited by 5 publications

References 18 publications

AlInGaN nanocrystal seeded growth of weak p-type β-(In0.1Ga0.9)2O3 nanowires and nanobelts

AlInGaN nanocrystal seeded growth of weak p-type β-(In0.1Ga0.9)2O3 nanowires and nanobelts

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

Phase transformation studies of metal oxides to dichalcogenides in 1-d structures.

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Product

Resources

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Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In₂O₃) nanowire phase change random access memory

AlInGaN nanocrystal seeded growth of weak p-type β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts

AlInGaN nanocrystal seeded growth of weak p-type β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts