Investigation of thermo-optic effect and multi-reflector tunable filter/multiplexer in SOI waveguides

Passaro, Vittorio M. N.; Magno, F.; Tsarev, A.V.

doi:10.1364/opex.13.003429

Cited by 53 publications

(26 citation statements)

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“…Phase control is done here using the thermo-optic effect in silicon. Silicon has a relatively large thermo-optic coefficient being ‫ץ‬n / ‫ץ‬T = 1.86ϫ 10 −4 K −1 at a wavelength of 1550 nm resulting in an easy, low-cost, and stable way of achieving phase modulation [4].…”

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confidence: 99%

Off-chip beam steering with a one-dimensional optical phased array on silicon-on-insulator

et al. 2009

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Optical phased arrays are versatile components enabling rapid and precise beam steering. An integrated approach is followed in which a 1D optical phased array is fabricated on silicon-on-insulator. The optical phased array consists of 16 parallel grating couplers spaced 2 m apart. Steering in one direction is done thermo-optically by means of a titanium electrode on top of the structure using the phased array principle, while steering in the other direction is accomplished by wavelength tuning. In this Letter, an integrated approach on siliconon-insulator (SOI) is taken where the phase differences are introduced on a photonic integrated circuit and the light is subsequently coupled off chip. Phase control is done here using the thermo-optic effect in silicon. Silicon has a relatively large thermo-optic coefficient being ‫ץ‬n / ‫ץ‬T = 1.86ϫ 10 −4 K −1 at a wavelength of 1550 nm resulting in an easy, low-cost, and stable way of achieving phase modulation [4].In [5] a similar approach is used with an AlGaAs integrated waveguide array. A continuous deflection over an angle of 0 . 41°at a wavelength of 900 nm with a FWHM divergence of 0 . 09°is reported. The phase modulation was done electro-optically with indium tin oxide/AlGaAs Schottky junctions. The array spacing is much larger than the spacing achievable with the present fabrication technologies on SOI, making the latter attractive for beam steering.A schematic of the component can be found in Fig. 1. The component was fabricated on SOI with an oxide thickness of 2 m and a silicon thickness of 220 nm using standard complementary metal-oxide semiconductor (CMOS) processes in the Interuniversity MicroElectronics Center (IMEC) [6]. Two etching steps are used: one of 220 nm for etching the waveguides and the multimode interference (MMI) splitters and the second of 70 nm to etch the grating couplers. The structure is excited with transverseelectric (TE) polarized light through a lensed fiber via the facet of a 3-m-wide integrated access waveguide. This waveguide is tapered to a width of 500 nm and then split with a MMI-splitter tree into sixteen 800 nm wide parallel waveguides, spaced 2 m apart. On top of each waveguide a second-order diffraction grating intended for light outcoupling is shallow etched, characterized by a period of 630 nm and a duty cycle of 0.5 for efficient outcoupling of the TE polarized light. The grating coupler consists of 50 periods. After approximately 35 periods the measured outcoupled light has decayed by a factor of 1/e 2 . Since transverse-magnetic (TM) polarized light will not be coupled out efficiently by the grating couplers owing to the difference in effective index, the component is highly polarization dependent. Afterward a benzocyclobutene (BCB) layer of approximately 1 m is spun on top and a titanium electrode is sputtered with a thickness of approximately 100 nm. While the BCB does not allow for a very efficient heat transfer to the optical waveguide, this technique requires a minimum of processing to demonstrate the beam steeri...

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Off-chip beam steering with a one-dimensional optical phased array on silicon-on-insulator

et al. 2009

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“…Silicon photonics can exploit several physical effects to achieve this goal, such as thermo-optical effects [65,66] and plasma-dispersion effects. Non-linear effects can be also exploited, such as stimulated Raman scattering, the Kerr effect, and two-photon absorption (TPA) inducing free-carrier absorption (FCA) [67].…”

Section: Technological Platformsmentioning

confidence: 99%

Future Scenarios for Software-Defined Metro and Access Networks and Software-Defined Photonics

Muciaccia

Passaro

2017

Photonics

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Abstract:In recent years, architectures, devices, and components in telecommunication networks have been challenged by evolutionary and revolutionary factors which are drastically changing the traffic features. Most of these changes imply the need for major re-configurability and programmability not only in data-centers and core networks, but also in the metro-access segment. In a wide variety of contexts, this necessity has been addressed by the proposed introduction of the innovative paradigm of software-defined networks (SDNs). Several solutions inspired by the SDN model have been recently proposed also for metro and access networks, where the adoption of a new generation of software-defined reconfigurable integrated photonic devices is highly desirable. In this paper, we review the possible future application scenarios for software-defined metro and access networks and software-defined photonics (SDP), on the base of analytics, statistics, and surveys. This work describes the reasons underpinning the presented radical change of paradigm and summarizes the most significant solutions proposed in literature, with a specific emphasis to physical-layer reconfigurable networks and a focus on both architectures and devices.

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“…Then, we take into account the influence of temperature on the GH effect. We assume the TO coefficients for silicon and silica are 1.87 × 10 −4 /K and 1 × 10 −5 /K [12], respectively. We also choose the initial temperature is 293 K. The maximum GH shift dependent on temperature for different thicknesses of gold layer is shown in Fig.…”

Section: Planar Waveguidementioning

confidence: 99%

Thermo-optic Goos–Hänchen effect in silicon-on-insulator waveguide

et al. 2015

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has attracted much attention of researchers, and large lateral shift has been realized in different structures for its potential applications in integrated optics, optical storage, and optical sensors, such as a Krestschmann configuration with longrange surface plasmon resonance and a prism-waveguide system with gold layer. Wang et al. [3] investigated the tunable lateral shifts in a Kretschmann configuration with an electro-optic crystal prism based on the surface plasmon resonance and Pockels effect. In a prism-waveguide system with gold layer, the positive and negative lateral shifts were studied, and the enhancement of GH effect can be widely used in the detection of surface irregularities and roughness because of its great improvement of sensitivity [4]. In 2013, Wang proposed a high-sensitivity temperature sensor based on the enhanced GH effect in a symmetrical metal-cladding waveguide [5]. The temperature change induces the GH shift change which can be detected by the position-sensitive detector (PSD). The sensor exhibits a good linearity and a high resolution of approximately 5 × 10 −3 °C.Silicon-on-insulator (SOI) waveguide structures are very promising in the application areas, such as optical interconnects in high-speed microprocessors and on-chip control circuits with optoelectronics for wavelength division multiplexing. They are characterized by small optical losses over communication wavelengths and fully compatible with CMOS technology and micromechanical devices [6,7]. Silicon is available in large size, good quality, and low price, and its technology is highly developed. A typical SOI waveguide has a silicon core and a silica cladding. As silicon's thermo-optic effect [8] is significantly larger than its electro-optic effect [9], it is an attractive method to modulate the refractive index in SOI waveguides. As devices and components based on thermo-optic (TO) effect show low transmission loss, low cost, high stability, low power consumption, and very large scale of integration, the TO effect Abstract We study the thermo-optic Goos-Hänchen (TOGH) effect in a prism-waveguide coupling structure with silicon-on-insulator waveguide. Stationary-phase method is utilized to calculate the TOGH shift. When the waveguide is regarded as a two-dimensional planar waveguide, a nonlinear relation between GH shift and temperature is obtained. Based on the noticeable TOGH effect, a sensitive temperature modulator or sensor can be realized. As the waveguide width is limited, the proposed structure can be regarded as a three-dimensional rectangular waveguide. We explore the GH shift and TOGH effect for different modes propagating in rectangular waveguide which show different linear relations between GH shift and temperature, which can be used to design mode-selective device based on TO effect.

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Investigation of thermo-optic effect and multi-reflector tunable filter/multiplexer in SOI waveguides

Cited by 53 publications

References 0 publications

Off-chip beam steering with a one-dimensional optical phased array on silicon-on-insulator

Off-chip beam steering with a one-dimensional optical phased array on silicon-on-insulator

Future Scenarios for Software-Defined Metro and Access Networks and Software-Defined Photonics

Thermo-optic Goos–Hänchen effect in silicon-on-insulator waveguide

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