2017
DOI: 10.1016/j.tsf.2017.05.015
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Investigation of Ti 0.54 Al 0.46 /Ti 0.54 Al 0.46 N multilayer films deposited by reactive gas pulsing process by nano-indentation and electron energy-loss spectroscopy

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Cited by 12 publications
(8 citation statements)
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“…TiAl and TiAlN monolayer thin films were deposited onto Si (100) wafer by RF magnetron sputtering using one sintered titanium/aluminium 66/33 at.% alloy target as described elsewhere [4]. Same experimental conditions were used to deposit (TiAl/TiAlN)n multilayer films with different periods using Reactive Gas Pulsing Process (RGPP) [5] with a controlled pulsing flow rate of the nitrogen reactive gas as described elsewhere [1]. Finally, the samples considered in this paper are summarised in Table 1 Nano-indentation tests were performed using an Ultra Nano-indentation Hardness Tester provided by Anton Paar.…”
Section: Methodsmentioning
confidence: 99%
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“…TiAl and TiAlN monolayer thin films were deposited onto Si (100) wafer by RF magnetron sputtering using one sintered titanium/aluminium 66/33 at.% alloy target as described elsewhere [4]. Same experimental conditions were used to deposit (TiAl/TiAlN)n multilayer films with different periods using Reactive Gas Pulsing Process (RGPP) [5] with a controlled pulsing flow rate of the nitrogen reactive gas as described elsewhere [1]. Finally, the samples considered in this paper are summarised in Table 1 Nano-indentation tests were performed using an Ultra Nano-indentation Hardness Tester provided by Anton Paar.…”
Section: Methodsmentioning
confidence: 99%
“…Finally, the samples considered in this paper are summarised in Table 1 Nano-indentation tests were performed using an Ultra Nano-indentation Hardness Tester provided by Anton Paar. Experiments were conducted using a Berkovich tip and the multicycle procedure in load control up to 8 mN [1,4].…”
Section: Methodsmentioning
confidence: 99%
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