Investigation of TID degradation of high voltage circuits in flash memory

Qiao, Fengying; Pan, Liyang; Liu, Xuemei; Ma, Haozhi; Wu, Dong; Xu, Jun

doi:10.1109/iirw.2013.6804186

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2014

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“…In addition, the inherent robustness of the cell and the possibility of supply voltage level-program and erase (set and reset) make this type of memory especially interesting for high reliability, low power and extreme environment applications. The supply voltage program and erase offer a path to eliminate the charge pumps, which are known to contribute significantly to power consumption [3] [4]and radiation induced failures [5] [6]for flash memories.…”

Section: Introductionmentioning

confidence: 99%

Reliability characterization of a commercial TaO<inf>x</inf>-based ReRAM

Yang-Scharlotta

Fazio

Amrbar

et al. 2014

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)

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We present results of endurance and retention characterization for one of the first commercially available TaO X -based resistive memory chip in room and higher temperature environments. Data retention of the memory chip shows activation energy of 1.13eV and demonstrates an 85°C 10year data retention even after 250,000 programming cycles. The combined program and read errors were in the range of 10 -7 to 10 -5 and the memory chip withstood 10 6 program cycles at 125°C. Overall, the reliability of this commercial resistive memory chip compares well with flash memory.

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Section: Introductionmentioning

confidence: 99%