Investigation of Time–Dependent Resistive Switching Behaviors of Unipolar Nonvolatile Organic Memory Devices

Abstract

Organic resistive memory devices are one of the promising next-generation data storage technologies which can potentially enable low-cost printable and flexible memory devices. Despite a substantial development of the field, the mechanism of the resistive switching phenomenon in organic resistive memory devices has not been clearly understood. Here, the time-dependent current behavior of unipolar organic resistive memory devices under a constant voltage stress to investigate the turn-on process is studied. The turn-on process is discovered to occur probabilistically through a series of abrupt increases in the current, each of which can be associated with new conducting paths formation. The measured turn-on time values can be collectively described with the Weibull distribution which reveals the properties of the percolated conducting paths. Both the shape of the network and the current path formation rate are significantly affected by the stress voltage. A general probabilistic nature of the percolated conducting path formation during the turn-on process is demonstrated among unipolar memory devices made of various materials. The results of this study are also highly relevant for practical operations of the resistive memory devices since the guidelines for time-widths and magnitudes of voltage pulses required for writing and reading operation can be potentially set.

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

“…Although a lot of researches mentioned above have investigated the advantages of low‐cost flexible organic memory, the underlying resistive switching mechanism behavior of organic ReRAM is still scarce. Because of this, Lee et al researched the time‐dependent current act of unipolar organic ReRAM devices with nanocomposite of polystyrene (PS) and phenyl‐C61‐butyric acid methyl ester (PCBM) with constant voltage bias in order to figure out the turn‐on procedure, and they successfully demonstrated a common probabilistic property of the formation of penetrated conducting path during SET process. As shown in Figure , the fabricated organic ReRAM devices displayed typical unipolar behavior along with the phenomenon of negative differential resistance (NDR).…”

“…h) The schematic of whole turn‐on process with a constant V stress transforming from HRS to LRS (from left to right). Reproduced with permission . Copyright 2018, Wiley‐VCH.…”

2D Metal–Organic Framework Nanosheets with Time‐Dependent and Multilevel Memristive Switching

“…In another aspect, the operating principles of the RRAM are still controversial. The formation and rupture of the CPs exhibit general probabilistic nature, while the stress voltage ( V Stress ) has the significant effect on the current path formation rate . It is very necessary to study the resistive switching (RS) mechanism on formation process of the percolating conduction paths using statistical analysis techniques .…”

“…The formation and rupture of the CPs exhibit general probabilistic nature, while the stress voltage ( V Stress ) has the significant effect on the current path formation rate . It is very necessary to study the resistive switching (RS) mechanism on formation process of the percolating conduction paths using statistical analysis techniques . Studying the currents change behaviors under a constant voltage stress with respect to time duration is beneficial for in‐depth understanding of the operation mechanism of RRAMs.…”

Protein Nanosphere Anchors for Stabilizing Hydroxylated Polymer Chains in Organic Memory Transistors with Outstanding Retention Characteristics

“…Organic (polymeric) materials possess relatively soft and flexible characteristics, compared to inorganic materials, so that keen attention has been paid to organic memory devices as a candidate for next generation flexible memory devices 16–21. In particular, transistor‐type organic memory devices (TOMDs) have been spotlighted due to their advantage of three electrode structures that enable both voltage‐controlled tuning of memory performances and active matrix‐addressing of memory subcells in array devices 22–28.…”