Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Sun, Wenyuan; Joh, Jungwoo; Krishnan, S.; Pendharkar, S.; Jackson, Christine E.; Ringel, S. A.; Arehart, Aaron R.

doi:10.1109/ted.2018.2888840

Cited by 19 publications

(5 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As displayed in Figure 4 b, the V BR values of the devices with the AlN and Al 0.5 GaN etch-stop layers were 501 and 561 V, respectively. Moreover, Baliga’s figure of merit ( BFOM = V BR 2 / R DS _ on ) for various power transistors was calculated to evaluate the overall performance of these devices [ 16 , 17 ]. The BFOM values of the devices with the AlN and Al 0.5 GaN etch-stop layers were 44.37 and 83.11 MW/cm 2 , respectively.…”

Section: Resultsmentioning

confidence: 99%

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

et al. 2022

View full text Add to dashboard Cite

In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the device; this can be attributed to the lattice match between the layer and substrate. The results revealed that the Al0.5GaN etch-stop layer could reduce dislocation by 37.5% and improve device characteristics. Compared with the device with the AlN etch-stop layer, the p-GaN HEMT with the Al0.5GaN etch-stop layer achieved a higher drain current on/off ratio (2.47 × 107), a lower gate leakage current (1.55 × 10−5 A/mm), and a lower on-state resistance (21.65 Ω·mm); moreover, its dynamic RON value was reduced to 1.69 (from 2.26).

show abstract

Section: Resultsmentioning

confidence: 99%

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

et al. 2022

View full text Add to dashboard Cite

show abstract

“…[17][18] the material properties and electronic properties of GaAs, GaN, SiC, and Si are sorted in Table .4. From this table content, it is observed that Gallium Nitride ideal candidate to proceed for implementation in the advancement of Power Electronics [19]. It is observed by Johnson's figure of merit that GaN ideal candidate for high temperature and high power due to its High electron mobility, Saturation velocity, and high breakdown voltage.…”

Section: Heterostructurementioning

confidence: 99%

Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics

Gowthami

Balaji

Rao

2023

JICS

View full text Add to dashboard Cite

The Impact of Aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi Gate (FG) and Back Pi Gate(BG), High K dielectric material such as Hafnium dioxide(HfO2), Aluminium Oxide (Al2O3), Silicon nitride (Si3N4) on Aluminium Galium Nitride/ Gallium Nitride (AlGaN/GaN), Heterojunction High Electron Mobility Transistor (HEMT) of 6nm(nanometer) technology is simulated and extracted the results using the Silvaco Atlas TCAD tool. The importance of High K dielectric materials like Al2O3 and Si3N4 are studied for the proposal of GaN HEMT. AlN, GaN Cap Layers, and High K Dielectric material are layered one on another to overcome the conventional transistor draw backs like surface defects, scattering of the electron, and less mobility of electron. Hot electron effect is overcome by Pi type gate. Therefore, by optimizing the HEMT structure the abilities for certain devices are converted to abilities. The dependency on DC characteristics and RF characteristics due to GaN Cap Layers, Multi gate (FG &BG), and High K Dielectric material is established. Further Compared Single Gate (SG) Passivated HEMT, Double Gate (DG) Passivated HEMT, Double Gate Triple(DGT) Tooth Passivated HEMT, High K Dielectric Front Pi Gate (FG) and Back Pi Gate (BG) Nanowire HEMT. It is observed that there is an increased Drain Current (Ion) of 5.92(A/mm), low Leakage current(Ioff) 5.54E-13 (A) of Transconductance (Gm) of 3.71(S/mm), Drain Conductance (Gd) of 1.769(S/mm), Cutoff frequency(fT) of 743 GHz Maximum Oscillation frequency (Fmax) 765 GHz, Minimum Threshold Voltage (Vth) of -4.5V, On Resistance (Ron)of 0.40(Ohms) at Vgs =0V. These outstanding characteristics and transistor structure of proposed HEMT and materials involved to apply for upcoming generation High-speed GHz frequency applications.

show abstract

“…AlN layer used for carrier confinement reduction in alloy scattering improved scattering [15]. GaN Cap layer of 2 nm is deployed on the top of the structure [16]. By using GaN cap layer carrier mobility improved, improve transport mechanism [17].…”

Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor

Gowthami

Balaji

Rao

2023

IJECE

View full text Add to dashboard Cite

Advanced high electron mobility transistor (HEMT) with dual front gate, back gate with silicon nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The dependency on DC characteristics and radio frequency characteristics due to GaN cap layers, multi gate (FG and BG), and high K dielectric material is established. Further compared single gate (SG) passivated HEMT, double gate (DG) passivated HEMT, double gate triple (DGT) tooth passivated HEMT, high K dielectric front Pi gate (FG) and back Pi gate (BG) HEMT. It is observed that there is an increased drain current (Ion) of 5.92 (A/mm), low leakage current (Ioff) 5.54E-13 (A) of transconductance (Gm) of 3.71 (S/mm), drain conductance (Gd) of 1.769 (S/mm), Cutoff frequency (fT) of 743 GHz maximum oscillation frequency (Fmax) 765 GHz, minimum threshold voltage (V<sub>th</sub>) of -4.5 V, on resistance (Ron) of 0.40 (Ohms) at V<sub>gs</sub>=0 V. These outstanding characteristics and transistor structure of proposed HEMT and materials involved to apply for upcoming generation high-speed GHz frequency applications.

show abstract

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Cited by 19 publications

References 18 publications

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics

Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor

Contact Info

Product

Resources

About