1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)
DOI: 10.1109/iit.1999.812190
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Investigation of uniformity degradation by intentionally induced fast beam glitch with a disk-slot batch type endstation

Abstract: Genus Inc. has recently developed unique circuitry to annihilate a source plasma by reducing the anode Voltage of the ion source when a source glitch is detected (an arc recovery circuit). The use of this circuitry together with additional electronics enabled the introduction of artificial source glitches with time duration of 1 msec to 1.2 sec. at an arbitrary scan position triggered by a manual switch. In this work, a description of this instrument and the electrical measurements of source arc related phenom… Show more

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