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A novel replacement gate design with 1.5-3 nm oxide or remote plasma nitrided oxide gate insulators for sub-lOOnm Al/TiN or W/TiN metal gate nMOSFETs is demonstrated. The source/drain regions are self-aligned to a poly gate which is later replaced by the metal gate. This allows the temperatures after metal gate definition to be limited to 450 OC. Compared to pure SOz, the nitrided oxides provide increased capacitance with less penalty in increased gate current. A saturation transconductance (g,) of 1000 mS/mm is obtained for L,,,=70 nm and tox=1.5 nm. Peak cutoff frequency (fT) of 120 GHz and a low minimum noise figure (NF~") of 0.5 dB with associated gain of 19 dB are obtained for tox = 2 nm and L,,,=80 nm.

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This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.