A novel replacement gate design with 1.5-3 nm oxide or remote plasma nitrided oxide gate insulators for sub-lOOnm Al/TiN or W/TiN metal gate nMOSFETs is demonstrated. The source/drain regions are self-aligned to a poly gate which is later replaced by the metal gate. This allows the temperatures after metal gate definition to be limited to 450 OC. Compared to pure SOz, the nitrided oxides provide increased capacitance with less penalty in increased gate current. A saturation transconductance (g,) of 1000 mS/mm is obtained for L,,,=70 nm and tox=1.5 nm. Peak cutoff frequency (fT) of 120 GHz and a low minimum noise figure (NF~") of 0.5 dB with associated gain of 19 dB are obtained for tox = 2 nm and L,,,=80 nm.

No abstract

We present a low-temperature ͑mK͒ magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled by the position of the lowest bound state in the second well, and identify tunneling transitions that are unique to triple-barrier structures. We also demonstrate that the tunneling current is sensitive to integer and fractional quantum Hall effect states, and find that the voltage-tunable accumulation of charge in one of the samples provides an unusual environment for the study of ground states of a two-dimensional electron system. ͓S0163-1829͑96͒06431-4͔

No abstract

No abstract