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We show that a minimum of two traps is required to cause breakdown in SiON films down to 10Å. At least one trap must be an interface state and at least one must be a bulk state. At low voltages, the rate limiting step for breakdown is the generation of interface traps and is controlled by the release of H 0 .

A feasible computational framework that enables improved predictability of NBTI degradation within commercially available tools is discussed. The NBTI model is used for both delay correction in transistor characterization data and real-time circuit operation where recovery is present. The complementary nature of implementation is readily incorporated into existing model extraction and verification tools. The method provides significantly enhanced accuracy in simulations when compared to circuit data, yet retains practicality and flexibility.

This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.