Material dependence of hydrogen diffusion: implications for NBTI degradation

Abstract-The time, temperature, and oxide-field dependence of negative-bias temperature instability is studied in HfO 2 /TiN, HfSiO x /TiN, and SiON/poly-Si p-MOSFETs using ultrafast on-the-fly I DLIN technique capable of providing measured degradation from very short (approximately microseconds) to long stress time. Similar to rapid thermal nitrided oxide (RTNO) SiON, HfO 2 devices show very high temperature-independent degradation at short (submilliseconds) stress time, not observed for plasma nitrided oxide (PNO) SiON and HfSiO x devices. HfSiO x shows lower overall degradation, higher long-time power-law exponent, field acceleration, and temperature activation as compared to HfO 2 , which are similar to the differences between PNO and RTNO SiON devices, respectively. The difference between HfSiO x and HfO 2 can be attributed to differences in N density in the SiO 2 IL of these devices.Index Terms-Activation energy, field acceleration, high-k dielectric, hole trapping, interface traps, negative-bias temperature instability (NBTI), plasma oxynitride, p-MOSFET, thermal oxynitride, time exponent.

Section: Resultsmentioning

confidence: 97%

A Comparative NBTI Study of $\hbox{HfO}_{2}$, $\hbox{HfSiO}_{x}$, and SiON p-MOSFETs Using UF-OTF $I_{\rm DLIN}$ Technique

Deora

Maheta

Bersuker

et al. 2009

“…4 shows (RHS) the measured power-law time exponent (n) during long-time stress as a function of stress T , which is obtained by the conventional MSM method at various delays [8], as well as OTF (t 0 = 1 ms) [7] and UF-OTF (t 0 = 1 μs) [5] methods. It is now well known that recovery during measurement delay causes an increase in n [1], [7], [8]. As longer time recovery shows strong T dependence due to the ΔV IT -dominated process, a larger delay time in MSM results in strong T dependence of n [8].…”

Section: Resultsmentioning

confidence: 99%

“…The recovery of ΔV h and ΔV IT and the correlation of recovery phase to stress phase for different SiON processes are not yet established. Hence, there is an ongoing debate on the physical mechanism of recovery, particularly its dominance by ΔV h , ΔV IT , or the correlated combination of both ΔV h and ΔV IT [1], [8]- [14].…”

Section: Introductionmentioning

confidence: 99%

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A Common Framework of NBTI Generation and Recovery in Plasma-Nitrided SiON p-MOSFETs

Deora

Maheta

Islam

et al. 2009

“…ΔV T was measured using a conventional on-the-fly (OTF) I DLIN technique [7]. Channel length and width are 1µm and 10µm respectively, for NBTI and 1/f measurements.…”

Section: Device and Measurement Detailsmentioning

confidence: 99%

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Deora¹,

Paul²,

Bijesh³

et al. 2011

Abstract-In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility (µ h ) in the transport direction and alleviates charge flow towards the gate oxide. µ h enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height (φ) in SiGe. Similar field acceleration factor (Γ) for threshold voltage shift (ΔV T ) and increase in noise (ΔS VG ) in Si and SiGe suggests identical degradation mechanisms.Index Terms-Gate leakage, p-MOSFET, negative bias temperature instability (NBTI), SiGe, Tight-Binding.