Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

Chidambaram, P.R.; Bowen, C.; Chakravarthi, S.; Machala, C.; Wise, R.

doi:10.1109/ted.2006.872912

Cited by 182 publications

(101 citation statements)

References 159 publications

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“…In most modern silicon devices, strain is an important parameter used to modify the properties of the device itself [1]. Likewise in metallic specimens, understanding strain and its evolution under deformation will help further the understanding and predictive capabilities of the field.…”

Section: Introductionmentioning

confidence: 99%

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

et al. 2017

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Scanning nanobeam electron diffraction strain mapping is a technique by which the positions of diffracted disks sampled at the nanoscale over a crystalline sample can be used to reconstruct a strain map over a large area. However, it is important that the disk positions are measured accurately, as their positions relative to a reference are directly used to calculate strain. In this study, we compare several correlation methods using both simulated and experimental data in order to directly probe susceptibility to measurement error due to non-uniform diffracted disk illumination structure. We found that prefiltering the diffraction patterns with a Sobel filter before performing cross correlation or performing a square-root magnitude weighted phase correlation returned the best results when inner disk structure was present. We have tested these methods both on simulated datasets, and experimental data from unstrained silicon as well as a twin grain boundary in 304 stainless steel.

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Section: Introductionmentioning

confidence: 99%

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

et al. 2017

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“…1 However, stresses found during typical device fabrication may influence the SPE process. 2,3 Early investigations revealed exponential enhancement of the ͓001͔ SPE using hydrostatic pressure while subsequent investigations revealed uniaxial stress in the plane of the regrowing ␣/crystalline interface caused smaller changes to SPE rates. [4][5][6] In-plane compression also caused significant roughening of the regrowing ␣/crystalline interface.…”

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confidence: 99%

“…Furthermore, the stresses used were fairly small in magnitude ͑Ͻ0.5 GPa͒ and the stresses present in Si-based technology can be ϳ1 GPa or more. 2 Thus, the goal of this study is to examine the effect of very high uniaxial ͓110͔ stresses on SPE in ͑001͒ Si.…”

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confidence: 99%

Solid phase epitaxy in uniaxially stressed (001) Si

Rudawski

Jones

Gwilliam

2007

Applied Physics Letters

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The effect of ͓110͔ uniaxial stresses up to 1.5 GPa on defect nucleation during solid phase epitaxy of amorphous ͑001͒ Si created via ion implantation was examined. The solid phase epitaxial regrowth velocity was slowed in compression. However, in tension, the velocity was unaffected. Both compression and tension resulted in an increase in regrowth defects compared to the stress-free case. The defects in compression appear to arise from roughening of the crystallizing interface whereas in tension it is proposed that reorientation of crystallites near the initial amorphous/ crystalline interface is responsible for defect formation. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2801518͔ Solid phase epitaxy ͑SPE͒ in amorphous ͑␣͒ Si created via ion implantation produces enhanced dopant activation and shallower junctions. 1 However, stresses found during typical device fabrication may influence the SPE process. 2,3 Early investigations revealed exponential enhancement of the ͓001͔ SPE using hydrostatic pressure while subsequent investigations revealed uniaxial stress in the plane of the regrowing ␣/crystalline interface caused smaller changes to SPE rates. [4][5][6] In-plane compression also caused significant roughening of the regrowing ␣/crystalline interface. 7 This is significant since interfacial roughening is known to cause SPE-related defect formation. 8,9 However, while BarvosaCarter et al. 7 quantified and modeled the roughness of the regrowing interface, they did not quantify the resulting defects or examine tensile stresses. Furthermore, the stresses used were fairly small in magnitude ͑Ͻ0.5 GPa͒ and the stresses present in Si-based technology can be ϳ1 GPa or more. 2 Thus, the goal of this study is to examine the effect of very high uniaxial ͓110͔ stresses on SPE in ͑001͒ Si.For this study, 50-m-thick polished ͑001͒ Si wafers were used. The specimens were first Si + implanted at 50 and 200 keV with doses of 1.0ϫ 10 15 cm −2 and subsequently As + implanted at 300 keV to a dose of 1.8ϫ 10 15 cm −2 . Samples were cleaved along ͗110͘ directions into ϳ0.3ϫ 1.8 cm 2 strips. Stress was applied by bending and inserting the strips into slots in a quartz tray spaced ϳ1.5 cm apart. A Philtec laser displacement measurement system accurate to 1 m measured the local radius of curvature along the strips. The bent strips were symmetric and parabolic in shape with the smallest radius of curvature at midlength. The ͓110͔ stress ͑ ͓110͔ ͒ was calculated using the ͓110͔ Young's modulus of Si near ϳ500°C ͑ϳ1.61ϫ 10 11 Pa͒, the wafer halfthickness, and the local radius of curvature as presented elsewhere. 10,11 Maximum repeatable stresses of 1.5± 0.1 GPa were attained. Specimens were annealed at 525°C in N 2 ambient for 0.7-3.2 h. Stress-free, tensile, and compressive specimens were annealed simultaneously for each anneal time. Upon removal from the quartz tray after annealing, the specimens exhibited no detectable radii of curvature ͑ӷ2.0 m͒ indicating no measurable plastic strain. Regrowth of the ␣-Si layers was ex...

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“…Many intrinsic material properties, including those most significant to silicon-based technology such as band gap, effective mass, mobility, diffusivity and activation of dopants, and oxidation rates, are severely altered by stress/strain effects (Sun et al, 2007;Chidambaram et al, 2006). It has been recognized, therefore, that not only structural defects but also lattice elastic stress/strain near to epilayer/substrate interfaces (for instance, originated by different thermal expansion coefficients) are factors that crucially influence device performance and reliability.…”

Section: Introductionmentioning

confidence: 99%

Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi₂nanoparticles

Lang

Menezes²,

Santos³

et al. 2013

J Appl Cryst

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Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi 2 nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using !:' mappings of the (111) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ionbeam-induced epitaxial crystallization of Fe + -implanted Si(001), were observed to have different orientations and morphologies (sphere-and plate-like nanoparticles) within the implanted/recrystallized region. The results show that the shape of the synthesized material singularly affects the surrounding Si lattice. The lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers.

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Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

Cited by 182 publications

References 159 publications

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

Solid phase epitaxy in uniaxially stressed (001) Si

Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi₂nanoparticles

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Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

Cited by 182 publications

References 159 publications

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

Solid phase epitaxy in uniaxially stressed (001) Si

Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2nanoparticles

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Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi₂nanoparticles