2012
DOI: 10.1016/j.apradiso.2011.10.013
|View full text |Cite
|
Sign up to set email alerts
|

Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diode

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
10
0

Year Published

2015
2015
2023
2023

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 27 publications
(10 citation statements)
references
References 10 publications
0
10
0
Order By: Relevance
“…In contrast, diamond Schottky barrier diodes with good electrical characteristics can be more easily fabricated that has been already reported by several groups . In addition, Schottky diode structure is more radiation tolerant to high energy radiation particles than p–n junction .…”
Section: Materials and Fabrication Proceduresmentioning
confidence: 86%
“…In contrast, diamond Schottky barrier diodes with good electrical characteristics can be more easily fabricated that has been already reported by several groups . In addition, Schottky diode structure is more radiation tolerant to high energy radiation particles than p–n junction .…”
Section: Materials and Fabrication Proceduresmentioning
confidence: 86%
“…Devices using iron-doping of the intrinsic region of a GaN-based PIN similarly yielded results ranging from 0.98% to 2.7%. [11][12][13] Likewise, Ni-63 experimental research using non GaN-based materials have been performed, 1,14,15 yielding potentially promising results after changes could be possibly made to the designs in the future.…”
Section: Introductionmentioning
confidence: 99%
“…Here, we report a novel BV microcell based on s-SWCNT/Si p-n junction structure, considering that the p-n junction exhibits better rectification property than the Schottky one [8]. It is the first time that the s-SWCNTs/Si p-n heterojunctions is implemented as the energy conversion in BV microcell.…”
Section: Introductionmentioning
confidence: 98%