2015
DOI: 10.1016/j.egypro.2015.07.117
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Investigation on Blistering Behavior for n-type Silicon Solar Cells

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Cited by 16 publications
(11 citation statements)
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“…Furthermore, the silanol group (Si-OH) ∼ 3670 cm −1 is one of the key indicators showing that hydrogen species are trapped by the oxide layer that formed after heat treatment. 4345…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, the silanol group (Si-OH) ∼ 3670 cm −1 is one of the key indicators showing that hydrogen species are trapped by the oxide layer that formed after heat treatment. 4345…”
Section: Resultsmentioning
confidence: 99%
“…However, it is clear that both the SiO x layer thickness and the density increased with longer ozone pulse and higher ALD deposition temperature. [28] As the diffusivity of hydrogen in SiO 2 is two orders of magnitude higher than that in Al 2 O 3 at high temperature, [50] hydrogen originating from the Al 2 O 3 film can diffuse through the oxide layer to the silicon surface, accumulate near the SiO x /Si interface, [32,49,51] and form passivating Si-H bonds to reduce the surface defect density. On the other hand, if the Al 2 O 3 film is not initially hydrogen-rich, there is not enough hydrogen at the silicon/SiO 2 interface after thermal anneal to passivate the dangling bonds.…”
Section: Discussion About the Chemical Passivationmentioning
confidence: 99%
“…Increased blistering has been found to correlate with degraded surface passivation and decreased open-circuit voltage (V oc ) in silicon solar cells. [101,102,103,104] In a complex segmented device, such as a pixel detector, ruptured blisters pose a severe risk of short-circuits between elements in the detector, which may render the device non-functional. An example of blistering between segments can be seen in Fig.…”
Section: Blistering Of Al 2 Omentioning
confidence: 99%