Investigation on CDM ESD events at core circuits in a 65-nm CMOS process

Lin, Chun Yu; Tang, Chang; Ker, Ming Dou

doi:10.1016/j.microrel.2012.04.021

Cited by 3 publications

(1 citation statement)

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“…ESD events can cause soft or hard damage of the device during the assembly processes. Due to the variety of manufacturing processes and application of devices, there are models such as charged human body model (HBM), charged device model (CDM) and the machine model (MM) to evaluate the damage influence of ESD events [18,19]. HBM is used to simulate the discharge of the human body to electrostatic sensitive devices after charging.…”

Section: Samples and Test Methodsmentioning

confidence: 99%

Study on electrostatic discharge (ESD) characteristics of ultra-thin dielectric film

Wang¹,

Sun²,

He³

et al. 2022

Plasma Sci. Technol.

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Electrostatic discharge (ESD) event usually destroys the electrical properties of dielectric films, resulting in product failure. In this work, the breakdown characteristic of machine mode (MM) ESD on three different nano size films of head gimble assemble (HGA) are obtained experimentally. The breakdown voltage and thickness parameters show a positive proportional relationship, but they are generally very low and have large discrete characteristics (~30%). The maximum and minimum breakdown voltages of the tested samples are 1.08 V and 0.46 V, which are far lower than the requirement of current standard (25 V). In addition, the judgment criterion of product damage is given, and the relationship between discharge voltage polarity, initial resistance and breakdown voltage is studied. Finally, the theoretical analysis of breakdown characteristic law has been given.

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Section: Samples and Test Methodsmentioning

confidence: 99%