2019
DOI: 10.1587/elex.16.20180992
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Investigation on impact of substrate on low-pass filter based on coaxial TSV

Abstract: An ultra-compact Butterworth low-pass filter (LPF) has been proposed based on through-silicon-via (TSV) technology without investigation the substrate impact. The conductivity of substrate generally leads to noise interference on the passive devices. This letter analyzes the substrate impact on the components, i.e. the inductor and capacitor, and on the whole LPF, by establishing and studying the equivalent circuit model. It is concluded that this type of LPF based on coaxial TSV can be widely used for any-res… Show more

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Cited by 5 publications
(4 citation statements)
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“…The amplitude square function of the Butterworth filter amplitude is shown in Equation (4). where N is the order of the filter, is the cut-off frequency, and is the cut-off frequency at −3dB [ 23 ]. It can be seen from the above formula that the n-order filter has 2 N poles, and these poles are distributed in the Butterworth circle.…”
Section: Related Theorymentioning
confidence: 99%
“…The amplitude square function of the Butterworth filter amplitude is shown in Equation (4). where N is the order of the filter, is the cut-off frequency, and is the cut-off frequency at −3dB [ 23 ]. It can be seen from the above formula that the n-order filter has 2 N poles, and these poles are distributed in the Butterworth circle.…”
Section: Related Theorymentioning
confidence: 99%
“…Through-silicon via (TSV) based three-dimensional integrated circuit (3D IC) provides many benefits over traditional interconnection such as abundant interconnect bandwidth, less communication energy, reduced power consumption and improved performance [1]. It is also widely used in filter [2,3,4,5,6] and passive devices [7,8,9,10,11,12].…”
Section: Introductionmentioning
confidence: 99%
“…On-chip inductor is an important passive device in radiofrequency integrated circuits (RFICs) [1]. 3-D packaging technology using through-silicon vias (TSVs) initiates the realization of passive components including on-chip inductor, capacitor, filters, and so on [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Compared with a conventional 2-D inductor, a TSV-based 3-D inductor has advantages of high inductance density and less form factor [20][21][22][23][24].…”
Section: Introductionmentioning
confidence: 99%