Investigation on n-Type (−201) β-Ga₂O₃ Ohmic Contact via Si Ion Implantation

Abstract

Heavy doped n-type ˇ-Ga 2 O 3 (HD-Ga 2 O 3 ) was obtained by employing Si ion implantation technology on unintentionally doped ˇ-Ga 2 O 3 single crystal substrates. To repair the Ga 2 O 3 lattice damage and activate the Si after implantation, the implanted substrates were annealed at 950 ı C, 1000 ı C, and 1100 ı C, respectively.High-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000 ı C. The minimum specific contact resistance is 9:2 10 5 cm 2 , which is attributed to the titanium oxide that is formed at the Ti/Ga 2 O 3 interface via rapid thermal annealing at 480 ı C. Based on these results, the lateral ˇ-Ga 2 O 3 diodes were prepared, and the diodes exhibit high forward current density and low specific on-resistance.

Lateral β-Ga2O3 Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

“…The Si implantation and annealing treatment were performed in the cathode region of the sidewall and bottom mesa to form an ohmic contact. [28] The doping concentration is estimated at ∼ 5 × 10 19 cm −3 , based on the simulation. After Si activation, the Ti/Au electrodes were evaporated and implemented rapid thermal annealing (RTA) at 475 • C for 1 min.…”

Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector

“…In order to alleviate lattice mismatch and improve crystalline quality of epitaxial films, a buffer layer between substrate and epitaxial layer can be applied. However, there are few reports about the effect of buffer layer on the quality of β-Ga 2 O 3 film on c-sapphire [15,16] .…”