Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

Hu, Long; Su, Jiancang; Ding, Zeyu; Qingsong, Hao; Yuan, Xiao

doi:10.1063/1.4866715

Cited by 53 publications

(33 citation statements)

References 30 publications

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“…A strong electric field leads to intensive impact-ionization within the domain: each domain represents an intensive source of nonequilibrium carriers. In 2014, it was shown that the self-supporting conducting state in photoconductive switches can be explained by the appearance of collapsing domains in electron-hole plasma [24]. The lock-on effect that we have discovered in GaAs pulse-sharpening diodes bears a strong similarity to the lock-on effect in photoconductive switches.…”

Section: Resultsmentioning

confidence: 69%

Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures

Brylevskiy

Smirnova

Rozhkov

et al. 2016

IEEE Trans. Plasma Sci.

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We present a comparative study of Si and GaAs high-voltage diodes operated in the delayed impact ionization breakdown mode. We use an experimental setup that allows measuring current and voltage on the diode simultaneously and independently during a 100-ps high-voltage switching transient. Si and GaAs structures with identical geometries and a stationary breakdown voltage of ∼1 kV were investigated. All devices trigger at close to 2 kV and are capable of forming a voltage ramp with a kilovolt amplitude and a 100-ps rise time. We found that Si p + nn + and p + pnn + structures differ in residual voltage: a relatively low residual voltage V res of 100-200 V was observed only for p + nn + structures, whereas for p + pnn + structures V res is about 1 kV. We report observing the lock-on effect in GaAs structures: after 100-ps avalanche switching GaAs diodes remain in a high conducting state as long as the applied voltage pulse lasts, whereas within the same time of 2 ns reference Si diodes fully recover the blocking capability.

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Section: Resultsmentioning

confidence: 69%

Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures

Brylevskiy

Smirnova

Rozhkov

et al. 2016

IEEE Trans. Plasma Sci.

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“…It's a typical direct semiconductor having band gap of 1.424 eV at 300 K. Due to its high electron mobility (8500 cm 2 /(V·s)), it is used in ultrafast devices [4].…”

Section: Gaasmentioning

confidence: 99%

Progress in Materials for Microelectronics and Further Challenges

Novkovski¹,

Skeparovski²,

Paskaleva³

et al. 2017

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Development of materials and technologies for microelectronics is required by the needs of the constantly increasing level of integration of microelectronics circuits. Increase of the integration level compels downscaling of all the dimensions of devices, which in its turn requires very thin layers with exceptional quality due to rather high electric fields at working conditions. First, technological improvements are adopted aimed at fabrication of materials with uniform quality, geometrical flatness and extremely low density of intentionally introduced defects. Second, new fabrication methods are developed providing materials with much better quality. Third, new materials showing better properties than the standard (conventional) ones are obtained and developed further.Decreasing the dimensions of the layers changes the nature of the physical phenomena involved in the functioning of devices. Quantum mechanical mechanisms are more and more important in the description of the properties of the materials and devices on the nanoscale. The question arises where is the limit of the possibilities of the materials and technologies for nanoscale electronics.

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“…Из литературы известны другие механизмы переключения структур из GaAs в открытое состояние в режиме лавинного пробоя. К ним, например, относится распространение волн ударной ионизации или генерация коллапсирующих доменов Ганна в лавинном режиме [7,8,11,12]. Первый из упомянутых механизмов маловероятен, так как лавинные S-диоды переключаются в условиях развитого лавинного пробоя и при отсутствии значительных перенапряжений.…”

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Транспорт носителей заряда и перезарядка глубоких уровней в структурах для лавинных S-диодов на основе GaAs

Prudaev¹,

Verkholetov²,

Королёва³

et al. 2018

Письма В Журнал Технической Физики

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Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n ^+–π–ν– n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the use of a commercial software that the electron injection affects the avalanche breakdown voltage and the spacecharge region broadens due to capture of avalanche holes on negative iron ions in the π-region. It is demonstrated by comparing the results of numerical calculation with the experimental data that the S -shaped I–V characteristic of the diffusion avalanche S -diodes cannot be explained within the previously proposed mechanism of capture of avalanche holes on the deep iron levels.

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Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

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Cited by 53 publications

References 30 publications

Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures

Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures

Progress in Materials for Microelectronics and Further Challenges

Транспорт носителей заряда и перезарядка глубоких уровней в структурах для лавинных S-диодов на основе GaAs

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