Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation

Bai, Zhiqiang; Tang, Xiaoyan; Xie, Siliang; He, Yanjing; Yuan, Hao; Song, Qi; Zhang, Yuming

doi:10.1109/ted.2020.3048921

Cited by 32 publications

(9 citation statements)

References 29 publications

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“…Now, this phenomenon also appears in SiC simulation, which can provide new ideas for optimizing single-pulse UIS characteristics. In the study of [20], the change of the current path of SiC in the single-pulse UIS process was also observed, indicating that this phenomenon can be realized by changing the design of MOSFET. The conclusion of this section proves the final hypothesis in section 3, and provides the direction for the optimization of the single-pulse UIS characteristics of SiC MOSFET.…”

Section: Simulation Study On Constant P-base Dopingmentioning

confidence: 89%

Study on single-pulse UIS capability of SiC MOSFET with different P-base morphology

Wang¹,

Bai²,

Li³

et al. 2022

Semicond. Sci. Technol.

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At present, the single-pulse Unclamped Inductive Switching (UIS) characteristics of SiC MOSFET have been fully studied. The current mainstream research suggests that the failure mechanism of MOSFET under a single UIS shock is divided into parasitic BJT conduction and metallization failure. However, there are still some shortcomings in the current research. First, it is difficult to distinguish these two failure mechanisms. Second, it is difficult to propose feasible optimization schemes. Therefore, it is still necessary to further explore the mechanism of single-pulse UIS. In this study, Sentaurus TCAD software was used to simulate different P-base doped MOSFETs, and the effect of doping concentration and morphology of P-base region on the single-pulse UIS failure mechanism was revealed. By designing the P-base region, the BJT conduction failure and metallization failure can be distinguished. In addition, the study also proved the relationship between breakdown voltage (BV) and the maximum temperature (Tmax) in the UIS process, and on this basis, an optimization scheme for the single UIS characteristics of MOSFET was proposed.

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Section: Simulation Study On Constant P-base Dopingmentioning

confidence: 89%

Study on single-pulse UIS capability of SiC MOSFET with different P-base morphology

Wang¹,

Bai²,

Li³

et al. 2022

Semicond. Sci. Technol.

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“…The bolt contour features are shown in Figure 1 below. In this paper, we iterate from the upper left corner of the image once, and the starting point of the contour is the first point [15][16][17][18] with a pixel of 1 found by the traversal. The 8 neighborhood directions of the starting point are judged, and the pixel point is not found during the cycle traversal, and the upper, lower, left, and right 4 neighborhoods of the pixel point contain the pixel point 0.…”

Section: Extract the Contour Features Of The Connected Area Of The Bo...mentioning

confidence: 99%

The Method of High Precision Self localization of Transmission Line Bolts by Lightweight Maintenance Robot

Hu,

Chen,

et al. 2023

J. Phys.: Conf. Ser.

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The conventional high-precision autonomous positioning method of transmission line bolts mainly focuses on image detection and positioning. Affected by the weather environment, it is difficult to take real-time images of transmission lines, which affects the accuracy of bolt positioning. Therefore, a method of high precision and autonomous positioning of transmission line bolts by the lightweight maintenance robot is designed. Extracting the contour features of the connected area of the bolt cross arm of the transmission line, and marking the connected area of the bolt, it is easier to locate the target bolt. Build a high-precision self positioning model for the transmission line bolts of the lightweight maintenance robot, compensate for the self positioning joint error of the lightweight maintenance robot, and maximize the bolt positioning accuracy. The simulation experiment verifies that the positioning method has higher accuracy and can be applied in real life.

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“…The numerical values of thermal resistivity and heat capacity per unit volume are based on past research. 41,42) Since SiC is a wide bandgap semiconductor, it is difficult to obtain good ohmic contact for a p-type with low contact resistance. 43) Moreover, research has found that ohmic contact resistance for p-type disperses widely.…”

Section: Exponentmentioning

confidence: 99%

An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range

Tsuji¹,

Iwamuro²

2023

Jpn. J. Appl. Phys.

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The avalanche ruggedness of unclamped inductive switching of 1.2 kV SiC trench MOSFETs was investigated with load inductances ranging from 1 μH to 5 mH. The SiC trench MOSFETs showed an extremely high avalanche current of more than 6000 A cm−2 at 1 μH, which was 3.3 times higher than state-of-the-art 1.2 kV Si IGBTs. This indicates that modules of SiC trench MOSFETs could show higher ruggedness for parallel connections. In addition, SiC trench diodes in which only the n+ source regions were eliminated from the MOSFETs were fabricated to verify the failure mechanism by the activation of parasitic bipolar transistors. In medium-load inductances from 10 μH to 100 μH, the MOSFETs showed lower avalanche ruggedness than the diodes, and failures were caused by the activation of the parasitic bipolar transistors. For inductances outside that range, the MOSFETs showed identical ruggedness to the diodes, and the failures were caused by the source metals melting.

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Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation

Cited by 32 publications

References 29 publications

Study on single-pulse UIS capability of SiC MOSFET with different P-base morphology

Study on single-pulse UIS capability of SiC MOSFET with different P-base morphology

The Method of High Precision Self localization of Transmission Line Bolts by Lightweight Maintenance Robot

An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range

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