Investigation on γ radiation effects of N-channel VDMOSFETs irradiated without electric field stress

Zeng, Guang; Liu, Xuqiang; Yang, Guixia; Li, Lei; Chen, Xiaochi; Yuan, Jiugang; Zhu, Sha; Pang, Yuanlong

doi:10.1016/j.microrel.2020.114019

Cited by 2 publications

(1 citation statement)

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“…Power MOSFETs attract attention when they are stressed by electric fields [2,3], when they are operating in ionizing radiation fields [4][5][6][7][8], and as potential gamma radiation dosimeters [9][10][11]. Otherwise, many applications of power MOSFETs need to be radiationhardened [12].…”

Section: Introductionmentioning

confidence: 99%

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

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The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

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