Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications

Ultrafast switching superjunction MOSFETs for single phase PFC applications

“…This device in combination with the 6A diode from Infineon (IDD06SG60C 8 at 400V) presents a lower turn on loss than the Fairchild device with the 4A diode from Cree (C3D04060E 8.5 at 600V). This result can be compared with the results obtained in [20] corresponding to a 600V GaN High-Electron-MobilityTransistor (HEMT) in cascode configuration with 150mΩ on resistance. In [20] the device switching energy is measured at dc voltage of 240V and a current range from 0 to 10A.…”

“…This result can be compared with the results obtained in [20] corresponding to a 600V GaN High-Electron-MobilityTransistor (HEMT) in cascode configuration with 150mΩ on resistance. In [20] the device switching energy is measured at dc voltage of 240V and a current range from 0 to 10A. The device measured in this work, 65R130C7 presents similar on resistance than the GaN device, but much smaller switching energy losses.…”

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

“…Devices with very competitive specific R on compared to the existing silicon metal-oxide-semiconductor field effect transistor (MOSFET) technologies have been reported both in academia and industry [1,2]. Additionally, the use of GaN devices can lead to lower switching losses, thus allowing an increase in switching frequency and therefore an overall increase in power density and efficiency of power conversion equipment [3][4][5]. Therefore, with GaN device technology being ramped up for volume production an increasing amount of research is now focused on the performance of GaN devices in various power electronic converters such as, boost, buck-boost, half-bridge and indirect matrix inverter topologies [5][6][7].…”

“…Additionally, the use of GaN devices can lead to lower switching losses, thus allowing an increase in switching frequency and therefore an overall increase in power density and efficiency of power conversion equipment [3][4][5]. Therefore, with GaN device technology being ramped up for volume production an increasing amount of research is now focused on the performance of GaN devices in various power electronic converters such as, boost, buck-boost, half-bridge and indirect matrix inverter topologies [5][6][7]. This study focuses on the challenges circuit design engineers are presented with when using GaN devices and in particular focuses on how parasitic components can create oscillatory behaviour and therefore lead to additional circuit losses.…”

Conducted noise of GaN Schottky barrier diode in a DC–DC converter

“…As a result, they are more attractive for high-frequency and high-temperature operating power electronic applications. Most published studies on GaN Schottky barrier diode (SBD) have focused on device structure [2,3], substrate material, which allows high-quality GaN epilayer growth [4,5], and recovery characteristics or converter efficiency, as compared with Si PiN diode (PiND) and Silicon Carbide (SiC) SBD [6]. However, the relationship between the dynamic characteristics of a GaN SBD and the electromagnetic interference (EMI) noise emissions in the power converter has not yet been properly investigated.…”