Investigations of atomic diffusion at CIGSSe/ZnSe interfaces with heavy ion elastic recoil detection analysis (HI-ERDA)

Lindner, S.; Bohne, W.; Jäger-Waldau, Arnulf; Lux‐Steiner, M.C.; Röhrich, J.; Vogl, G.

doi:10.1016/s0040-6090(01)01540-1

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…This tendency ͕thicker ͓Zn ͑1−Z͒ ,Cu 2Z ͔S-like interlayer after postannealing͖ might be weakened by diffusion/ intermixing processes involving In, which could also be triggered by the heat treatment, since it would foil the usage of the In signal as proper reference for the CIS absorber surface. For example, an additional ͑temperature driven͒ In diffusion out of the absorber into the covering buffer layer ͓as reported for Cu͑In, Ga͒͑S,Se͒ 2 absorbers and ZnSe buffer layers in the past 38,39 ͔ would decrease the determined thickness of the ͓Zn ͑1−Z͒ ,Cu 2Z ͔S-like interlayer ͓shown in Fig. 1͑d͔͒, compared to its "true" dimension.…”

Section: -3mentioning

confidence: 98%

Intermixing at the heterointerface between ZnS∕Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Bär

Ennaoui

Klaer

et al. 2006

Journal of Applied Physics

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The application of Zn compounds as buffer layers was recently extended to wide-gap CuInS 2 ͑CIS͒ based thin-film solar cells. Using an alternative chemical deposition route for the buffer preparation aiming at the deposition of a single-layer, nominal ZnS buffer without the need for any toxic reactants such as hydrazine has helped us to achieve a similar efficiency as respective CdS-buffered reference devices. After identifying the deposited Zn compound, as ZnS / Zn͑S,O͒ bilayer buffer in former investigations ͓M. Bär et al., J. Appl. Phys. 99, 123503 ͑2006͔͒, this time the focus lies on potential diffusion/intermixing processes at the buffer/absorber interface possibly, clarifying the effect of the heat treatment, which drastically enhances the device performance of respective final solar cells. The interface formation was investigated by x-ray photoelectron and x-ray excited Auger electron spectroscopy. In addition, photoelectron spectroscopy ͑PES͒ measurements were also conducted using tunable monochromatized synchrotron radiation in order to gain depth-resolved information. The buffer side of the buffer/absorber heterointerface was investigated by means of the characterization of Zn͑S,O͒ / ZnS / CIS structures where the ZnS / Zn͑S,O͒ bilayer buffer was deposited successively by different deposition times. In order to make the ͑in terms of PES information depth͒ deeply buried absorber side of the buffer/absorber heterointerface accessible for characterization, in these cases the buffer layer was etched away by dilute HCl aq . We found indications that while ͑out-leached͒ Cu from the absorber layer forms together with the educts in the chemical bath a ͓Zn ͑1−Z͒ ,Cu 2Z ͔S-like interlayer between buffer and absorber, Zn is incorporated in the uppermost region of the absorber. Both effects are strongly enhanced by postannealing the Zn͑S,O͒ / ZnS / CIS samples. However, it was determined that the major fraction of the Cu and Zn can be found quite close to the heterointerface in the buffer and absorber layer, respectively. Due to this limited ͑in the range of one monolayer͒ spatial extent, these "diffusion" mechanisms were rather interpreted as a chemical bath deposition induced and heat-treatment promoted Cu-Zn ion exchange at the buffer/absorber interface. Possible impacts of this intermixing on the performance of the final solar cell devices will also be discussed.

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Section: -3mentioning

confidence: 98%

Intermixing at the heterointerface between ZnS∕Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Bär

Ennaoui

Klaer

et al. 2006

Journal of Applied Physics

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“…Furthermore, the diffusion of In into the buffer layer is observed [10]. Besides the incorporation of the transport agent I used in the chemical vapor deposition for the growth of the ZnSe buffer layer, the diffusion between the absorber and the buffer layer was of special interest.…”

Section: Example: Chalkopyrite Solar Cellsmentioning

confidence: 99%

Materials Analysis Using Fast Ions

Bohne¹,

Denker²,

Lindner³

et al. 2003

AIP Conference Proceedings

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At the Ionenstrahllabor a great variety of ions with variable energies up to several MeV/u can be produced. Performing proton induced X-ray emission (PIXE) with protons of 68 MeV, heavy elements can be detected via the K X-rays in addition to their L X-rays. The large proton range and the small absorption coefficients for the K X-rays result in an analyzable depth of several millimeters. The L to K line intensity ratio yields further information on the composition of the objects. Examples of measurements on archaeological and art historical objects will be shown. The use of heavy ion elastic recoil detection analysis (HI-ERDA) allows the determination of the distribution of all elements in materials up to a depth of several micrometers. Especially the measurement of the hydrogen concentration is possible with high sensitivity. The experimental setup and measurements on solar cell materials will be presented.

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ZnO layers deposited by the ion layer gas reaction on Cu(In,Ga)(S,Se)₂ thin film solar cell absorbers—impact of ‘damp‐heat’ conditions on the layer properties

Bär

Reichardt

Sieber

et al. 2006

Progress in Photovoltaics

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Cu(In,Ga)(S,Se)2 (‘CIGSSe’) based solar cells with a ZnO window extension layer (WEL) deposited by the ion layer gas reaction (ILGAR) reach competitive efficiencies compared to corresponding references with CdS buffer and lead to a simplified device structure. The WEL replaces not only the CdS buffer, but also the undoped part of the usually applied rf‐sputtered ZnO window bi‐layer. The long‐term stability of CIGSSe‐based solar modules is currently under investigation. In order to pass the respective stability tests, which include exposure to ‘damp‐heat’ (DH) conditions (85% relative humidity at 85(C) to accelerate possible aging effects, a good intrinsic material stability is required. In Reference1 it was revealed, that ILGAR‐ZnO contains a certain amount of meta‐stable hydroxide, which can be directly tuned by the ILGAR process parameters (number of process cycles and process temperature). In order to determine the ILGAR process parameters, which result in intrinsically stable WELs, ILGAR‐ZnO/CIGSSe test structures were investigated by means of scanning electron microscopy (SEM) and x‐ray photoelectron spectroscopy (XPS) before and after a DH‐test. It was found that, induced by the DH‐conditions, a continuous dehydration of the WELs together with a disintegration of the ILGAR‐ZnO layers takes place. This supports an earlier suggested mechanism of a DH‐induced degradation by a release of water at the most critical location in a solar cell, at the heterointerface between window and absorber. By a systematic variation of the ILGAR process parameters it was possible to reduce the hydroxide content in the ILGAR‐ZnO layers resulting in intrinsically more stable samples. Copyright © 2006 John Wiley & Sons, Ltd.

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Investigations of atomic diffusion at CIGSSe/ZnSe interfaces with heavy ion elastic recoil detection analysis (HI-ERDA)

Cited by 7 publications

References 4 publications

Intermixing at the heterointerface between ZnS∕Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Intermixing at the heterointerface between ZnS∕Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Materials Analysis Using Fast Ions

ZnO layers deposited by the ion layer gas reaction on Cu(In,Ga)(S,Se)₂ thin film solar cell absorbers—impact of ‘damp‐heat’ conditions on the layer properties

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Investigations of atomic diffusion at CIGSSe/ZnSe interfaces with heavy ion elastic recoil detection analysis (HI-ERDA)

Cited by 7 publications

References 4 publications

Intermixing at the heterointerface between ZnS∕Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Intermixing at the heterointerface between ZnS∕Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Materials Analysis Using Fast Ions

ZnO layers deposited by the ion layer gas reaction on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers—impact of ‘damp‐heat’ conditions on the layer properties

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ZnO layers deposited by the ion layer gas reaction on Cu(In,Ga)(S,Se)₂ thin film solar cell absorbers—impact of ‘damp‐heat’ conditions on the layer properties