Investigations of diffusion kinetics in Si/Ta/Cu/W and Si/Co/Ta systems by secondary neutral mass spectrometry

Lakatos, Ákos; Erdélyi, Zoltán; Langer, G.A.; Daróczi, Lajos; Vad, K.; Csík, A.; Dudas, Alan; Beke, Dezső L.

doi:10.1016/j.vacuum.2010.01.019

Cited by 15 publications

(15 citation statements)

References 16 publications

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“…It was shown more recently in our Laboratory [1,2,3] that having a substrate/diffusant/thin-film/cap-layer structure (the thin film was typically several 10 nm thick, with grain sizes of the same order of magnitude; the refractory metal cap layer was used just to avoid the oxidation), first the diffusant atoms migrated very fast across the thin film and segregated at the film/cap-layer interface. The accumulated atoms at the film/cap layer interface formed a secondary diffusion reservoir and atoms diffused back to the thin layer.…”

Section: Summary Of Resultsmentioning

confidence: 99%

“…the volume diffusion penetration depth was shorter than the GB width. From the overall impurity content inside the film, the segregation can also be estimated in phase separating systems from the SNMS depth-profiling, if the bulk solubility is low and the GB density is known [1].…”

Section: Summary Of Resultsmentioning

confidence: 99%

“…If the films are nanocrystalline the mass transport along different grain boundaries, GBs, (short circuits) can have an important effect on the entire intermixing process. We have shown recently [1][2][3][4][5], that this process can be well characterized by a bimodal GB network with fast and slow diffusivities Furthermore, at low temperatures, during interdiffusion in binary systems where intermetallic layers can grow, it can be observed that the morphology of the formation and growth of the reaction product can be different from the usual picture observed at high temperatures, where the new 3 continuous phases form at the initial interface growing parallel to the initial contact surface. Indeed, it is known that at low temperatures, where bulk diffusion processes are practically frozen, even a complete intermixing of components in binary nanocrystalline couple can happen by grain boundary migrations through the volume [6,7,8].…”

Section: Introductionmentioning

confidence: 90%

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Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Beke

Langer

Molnár

et al. 2013

Philosophical Magazine

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Kinetic pathways of diffusion and solid state reactions in nanostructured thin film systemsMass transport and solid state reactions in nanocrystalline thin films is reviewed.It is illustrated that diffusion along different grain boundaries, GB, can have important effects on the overall intermixing process between two pure films.These processes can be well characterized by a bimodal GB network, with different (fast and slow) diffusivities. First the atoms migrate along fast GBs (triple junctions) and accumulate at the film surface. These accumulated atoms form a secondary diffusion source for back diffusion along slow boundaries.Thus the GBs of the thin films can be gradually filled up with the diffusing atoms and composition depth profiles reflect the result of these processes. Similar process can be observed in binary systems with intermetallic layers: instead of nucleation and growth of the reaction layer at the initial interface, the reaction takes place in the GBs and the amount of the product phase growths by the motion of its interfaces perpendicular to the GBs. Thus, the entire layer of the pure parent films can be consumed by this GB diffusion induced solid state reaction (GBDIREAC), and a fully homogeneous product layer can be obtained.

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Section: Summary Of Resultsmentioning

confidence: 99%

Section: Summary Of Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 90%

See 1 more Smart Citation

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Beke

Langer

Molnár

et al. 2013

Philosophical Magazine

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“…In addition from the slope of the same function of X versus t′ 1/2 plot (Fig.7b) the value of K can also be determined and it is K = 840 nm 2 /h. For the interpretation of the growth of the average composition near to the substrate in Cu, first we mention that in general diffusion along different grain boundaries can have important effects [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] on the overall intermixing process between two pure films. These processes can be well characterized by a bimodal GB network, with different (fast and slow) diffusivities.…”

Section: Discussionmentioning

confidence: 99%

Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature

Zaka

Shenouda

Fouad

et al. 2016

Microelectronics Reliability

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a b s t r a c tSolid state reaction between nanocrystalline Cu and Sn films was investigated at room temperature by depth profiling with secondary neutral mass spectrometry and by X-ray diffraction. A rapid diffusion intermixing was observed leading to the formation of homogeneous Cu 6 Sn 5 layer. There is no indication of the appearance of the Cu 3 Sn phase. This offers a way for solid phase soldering at low temperatures, i.e. to produce homogeneous Cu 6 Sn 5 intermediate layer of several tens of nanometers during reasonable time (in the order of hours or less). From the detailed analysis of the growth of the planar reaction layer, formed at the initial interface in Sn(100 nm)/Cu(50 nm) system, the value of the parabolic growth rate coefficient at room temperature is 2.3 × 10 −15 cm 2 /s. In addition, the overall increase of the composition near to the substrate inside the Cu film was interpreted by grain boundary diffusion induced solid state reaction: the new phase formed along the grain boundaries and grew perpendicular to the boundary planes. From the initial slope of the composition versus time function, the interface velocity during this reaction was estimated to be about 0.5 nm/h.

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“…14 is the solution of the Fick's equation, for the first detection of the diffusing atoms (Lakatos et al 2010 andYi 2005) Gustafsson et al, 1986, Carslaw and Jaeger 2000, Waszink et al 1990). This time unit value denoted in hours can give the retardation time of the given materials or layer structures against the thermal changes at the surface of the material.…”

Section: Thermal Conductivity Measurements With Calibrated Hot Boxmentioning

confidence: 99%

Thermal conductivity measurements with different methods: a procedure for the estimation of the retardation time

2013

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Abstract:As it is known that nowadays, reduction of the heating energy loss of buildings is achieved mainly by thermal insulation. This is one of the most important objectives of buildings constructions and retrofitting of buildings. Therefore research, calculation and simulation on the energy efficiency of buildings are of great importance. In this paper we give an expansive presentation about the measurements of the thermal conductivity, heat flux and thermal resistance of individual insulation materials as well as in-built wall constructions executed in our laboratory. Thermal diffusion coefficients and wall delaying ability of the systems will be given resulting from the measurements. First of all, thermal conductivity measurement results of individual insulation materials achieved by a Holometrix type Heat flow Meter (HFM) will be presented. Afterwards, two different steady-state methods for measuring thermal resistance of wall structures (Calibration hot box method (CC) and Heat Flux measurements by Hukseflux (HF) apparatus) will be introduced. These measurements were accomplished through either an inbuilt plaster/brick/plaster wall construction insulated internally at the first time and later externally with different materials. The main target of this paper is the presented theoretical procedure for the estimation of the retardation time of wall structures. Furthermore in this publication the determination of thermal performance of Expanded Polystyrene Insulation (EPS) applied to walls in building constructions can also be found. Moreover numerical predictions for thermal resistance are presented. Besides, infrared thermographs were used to visualise the insulation ability of the layer structures.2

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Investigations of diffusion kinetics in Si/Ta/Cu/W and Si/Co/Ta systems by secondary neutral mass spectrometry

Cited by 15 publications

References 16 publications

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature

Thermal conductivity measurements with different methods: a procedure for the estimation of the retardation time

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