The solid state reaction between Cu and a-Si films was investigated at 150-200°C by depth profiling with secondary neutral mass spectrometry. Intermixing was observed leading to the formation of a homogeneous Cu 3 Si layer at the interface. The growth of the crystalline silicide follows a parabolic law at 165°C and 200°C. At 150°C a transition from linear to parabolic kinetics is observed. Combining with our previous experimental results showing linear kinetics at 135°C [Acta Materialia, 61 (2013) 7173-7179], the temperature dependence of the linear and parabolic coefficients as well as the transition length can be estimated.

Highly transparent zinc oxide thin films with varied layer thicknesses have been prepared on microscopic glass substrates at 200 °C. Films thickness was measured by stylus profilometer. The films have been investigated for their structure using X-Ray diffraction; the patterns showed their amorphous nature. The dispersion parameters i.e. refractive index (n) and extinction coefficient (k) are computed in the wavelength range (350 -2500 nm). The Tauc model was used to determine the optical band gap and Urbach tail with direct allowed transitions. The real and imaginary parts of the high frequency dielectric constant were discussed. Other parameters such as penetration depth, cut-off wavelength, dissipation factor, volume and surface energy loss functions, reflection loss factor, optical, electrical and thermal conductivities have also been determined. A systematic study of a wide range of optical parameters of ALD prepared ZnO films can serve as a valuable data source and can enrich the knowledge of the studied material.

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