Enhancement of dispersion optical parameters of Al2O3/ZnO thin films fabricated by ALD

Transparent and flexible ZnO nanorods induced by thermal dissipation annealing without polymer substrate deformation for next-generation wearable devices

“…where a 0 is a constant, and E U is the Urbach energy corresponding to the width of the band tail. 67 ln a vs. hn used to determine the Urbach energy, which is related to the disorder of ZnO NR1s and NR2s. Specically, Urbach energies were calculated from the reciprocal gradient of the linear portion of this graph as 52.1 meV (ZnO NR1s) and 50.3 meV (ZnO NR2s), indicating that the latter NRs featured lower structural disorder and improved crystallinity.…”

“…The absorption coefficient and photon energy near the band edge are related by the following equation: α = α 0 exp( hν / E U ) where α 0 is a constant, and E U is the Urbach energy corresponding to the width of the band tail. 67 Fig. 9(c) shows a plot of ln α vs. hν used to determine the Urbach energy, which is related to the disorder of ZnO NR1s and NR2s.…”

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

“…Furthermore, the E U is considered an essential parameter to evaluate the defects and disorder in the materials. The Urbach equation for determining E U in terms of α is [34,35]: ( )…”

Influence of deposition temperature on microstructure and gas-barrier properties of Al2O3 prepared by plasma-enhanced atomic layer deposition on a polycarbonate substrate

“…7,8 Atomic layer deposition (ALD) is a technique for fabricating ultrathin lms of inorganic materials. [9][10][11] An ALD cycle comprises alternating pulses of precursor and oxidant accompanied by purging with an inert gas. The precursor and oxidant pulses are separately injected into the reaction chamber, and the by-products and excess precursor are purged by the inert gas.…”