Investigations of giant `forbidden' optical anisotropy in GaInAs - InP quantum well structures

Krebs, O.; Seidel, W.; André, J.P.; Bertho, D.; Jouanin, C.; Voisin, P.

doi:10.1088/0268-1242/12/7/002

Cited by 47 publications

(25 citation statements)

References 15 publications

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“…Such a quantum well structure retains the C 2v symmetry and its optical properties in theẽjj½1 1 0 andẽjj½11 0 polarizations should be different. Giant optical anisotropy in heterostructures without common cations and anions was predicted by Krebs and Voisin [15] and observed experimentally in GaInAs/InP quantum wells [16,17]. A semiquantitative approach (the H bf model) was proposed to describe this anisotropy [15].…”

Section: Article In Pressmentioning

confidence: 95%

Optical anisotropy of cubic crystals, from bulk to quantum dots

Кочерешко

Platonov

Gurevich

2007

Journal of Luminescence

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Section: Article In Pressmentioning

confidence: 95%

Optical anisotropy of cubic crystals, from bulk to quantum dots

Кочерешко

Platonov

Gurevich

2007

Journal of Luminescence

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“…This anisotropy has been found to be particularly large in systems without common atoms in the well and barrier materials (Krebs et al, 1997(Krebs et al, , 1998Krebs and Voisin, 2000). Other experiments have explicitly shown the possibility of tuning the optical anisotropy by means of an external electric field oriented along the growth direction (Kwok et al, 1992).…”

Section: G Spin-orbit Interaction In Systems With Interface Inversiomentioning

confidence: 98%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

922

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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“…As will be discussed further, reintroduction of the spin-orbit coupling at this point transforms the X'-Y' splitting into a mixing of the heavy and light hole states in quantum well (QW) structures. Although this mixing had been discussed as early as 1985 in the tight-binding calculations of Schulmann and Chang [1], the topic has recently attracted much attention with the experimental discovery of the related giant optical anisotropy in quantum well structures [2] where the host materials do not share a common atom or non-common atom (NCA)-QWs, and the simultaneous development of envelope function theories [3][4][5] and atomistic (empirical [2,6,7] or ab-initio [8]) calculations of this phenomenon. Optical anisotropy is sensitive to the details of interface structure, such as chemical nature of interface bonds, interface sharpness, etc... A detailed analysis of the dichroism and birefringence of quantum wells is therefore a new and major characterization tool to analyze the properties of semiconductor interfaces.…”

Section: And [111] Direction and Two Different Bonds Pointing Backwarmentioning

confidence: 99%

Breakdown of Rotational Symmetry at Semiconductor Interfaces: a Microscopic Description of Valence Subband Mixing

Cortez¹,

Krebs²,

Voisin³

2000

Acta Phys. Pol. A

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The recently discovered in-plane optical anisotropy of [0011-grown quantum wells offers a new theoretical and experimental insight into the electronic properties of semiconductor interfaces. We first discuss the coupling of X and Y valence bands due to the breakdown of rotation inversion symmetry at a semiconductor hetero-interface, with special attention to its dependence on effective parameters such as the valence band offset. The intracell localization of Bloch functions is explained from simple theoretical arguments and evaluated numerically from a pseudo-potential microscopic model. The role of envelope functions is then considered, and we discuss the specific case of non-common atom interfaces. Experimental results and applications to interface characterization are presented. These calculations give a microscopic justification, and establish the limits of the heuristic "HBF" model.

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Investigations of giant `forbidden' optical anisotropy in GaInAs - InP quantum well structures

Cited by 47 publications

References 15 publications

Optical anisotropy of cubic crystals, from bulk to quantum dots

Optical anisotropy of cubic crystals, from bulk to quantum dots

Semiconductor spintronics

Breakdown of Rotational Symmetry at Semiconductor Interfaces: a Microscopic Description of Valence Subband Mixing

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