We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.

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The quantum confined Pockels effect results from the combination of the genuine interface roto-inversion asymmetry and the breakdown of quantum well inversion symmetry due to the applied electric field. It is currently understood in terms of the field-dependent mixing of the heavy and light hole states at the center of the minizone. Here we investigate how excitonic interaction modifies the predictions of band-to-band calculations, and compare theory with experimental results obtained in In x Ga 1Ϫx As-InP quantum wells.

Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC Appl. Phys. Lett. 100, 151905 (2012); 10.1063/1.3702786 In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy J. Appl. Phys. 108, 013516 (2010); 10.1063/1.3457901 In-plane optical anisotropy in In x Ga 1 − x N ∕ GaN multiple quantum wells induced by Pockels effect Appl. Phys. Lett. 86, 011924 (2005); 10.1063/1.1841477 In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wellsThe recently discovered in-plane optical anisotropy of ͑001͒-grown quantum wells offers a new theoretical and experimental insight into the electronic properties of semiconductor interfaces. We first discuss the coupling of X and Y valence bands due to the breakdown of rotoinversion symmetry at a semiconductor heterointerface, with special attention to its dependence on effective parameters such as the valence band offset. The intracell localization of Bloch functions is explained from simple theoretical arguments and evaluated numerically from a pseudopotential microscopic model. The role of envelope functions is then considered, and we discuss the specific case of no-common atom interfaces. Experimental results and applications to interface characterization are presented, and the potential of the ''quantum confined Pockels effect'' for device applications is finally discussed.

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