Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots

Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements

“…Only the parallel component is relevant since refraction in the interface reduces the solid angle for light collection, and additionally, the QD orientation is predominantly parallel to the interface. 16 The measured decay rate ⌫͑ , z͒ is the sum of nonradiative ⌫ nrad ͑͒ and radiative ⌫ rad ͑ , z͒ decay rates. The latter is proportional to the projected LDOS ͑ , z͒ and depends explicitly on the distance z to the interface and the optical frequency .…”

Ground-state emission from a singleInAs∕GaAsself-assembled quantum dot structure in ultrahigh magnetic fields

“…[6] From such studies on flat self-assembled In x Ga 1−x As/GaAs QDs, the valence band ground state is at least 95 % heavy hole. [7] However, only a few percent light hole admixture threatens reliable optical manipulation based on selection rules.…”

THz Electro-absorption Effect in Quantum Dots

“…As expected from the 3D geometry of the QD, we found no dependency of the electro-absorption modulation strength on the polarization of THz signal. We observed a weak dependency on the polarization of the optical probe signal, which is most likely due to a well-known optical absorption anisotropy in the QDs [7]. We note that in Refs.…”