2000
DOI: 10.1116/1.1305286
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In-plane optical anisotropy of quantum well structures: From fundamental considerations to interface characterization and optoelectronic engineering

Abstract: Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC Appl. Phys. Lett. 100, 151905 (2012); 10.1063/1.3702786 In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy J. Appl. Phys. 108, 013516 (2010); 10.1063/1.3457901 In-plane optical anisotropy in In x Ga 1 − x N ∕ GaN multiple quantum wells induced by Pockels effect Appl. Phys. Lett. 86, 011924 (2005); 10.1063/1.18414… Show more

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Cited by 18 publications
(13 citation statements)
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“…QWs sample exhibits a PL spectrum centred at 1.56 µm, and full width at half maximum (FWHM) close to 90 nm. By changing the polarizer orientation, a slight intensity reduction is observed, as already reported for such InGaAs/InP hetero-interfaces [10]. Increasing this variation appears to be quite difficult, as the interface has to be controlled at the atomic scale.…”
Section: Growth and Characterizations Of The Qwiressupporting
confidence: 47%
“…QWs sample exhibits a PL spectrum centred at 1.56 µm, and full width at half maximum (FWHM) close to 90 nm. By changing the polarizer orientation, a slight intensity reduction is observed, as already reported for such InGaAs/InP hetero-interfaces [10]. Increasing this variation appears to be quite difficult, as the interface has to be controlled at the atomic scale.…”
Section: Growth and Characterizations Of The Qwiressupporting
confidence: 47%
“…This effect is similar to the one well known for symmetric quantum wells. 47 The interfacial symmetry affects the wave functions. The envelope functions for the first electron P state of the pyramid, the truncated cone and the lens are oriented along the ͓110͔ direction, whereas the second state is oriented along the ͓110͔ direction.…”
Section: A Atomistic Interface Effects: Level 2 Versus Levelmentioning
confidence: 99%
“…This leads to ambiguity in the results, as different choices may yield conflicting predictions as to which interface parameters are important, [12][13][14]61,64,69 or whether interface bandmixing effects are directly related to band offsets. 70,71,85,86 Such conflicts can only be resolved by deriving the envelope-function Hamiltonian from an ab initio selfconsistent potential, as suggested by Sham and Lu. 87 The purpose of this paper is to present such a derivation and examine its implications for interface band-mixing effects.…”
Section: A Background and Motivationmentioning
confidence: 99%