Optical orientation and spin relaxation of resident electrons in n-doped InAs/GaAs self-assembled quantum dots

Laurent, S.; Krebs, O.; Cortez, S.; Sénès, M.; Marie, X.; Amand, T.; Voisin, P.; Gérard, J. M.

doi:10.1016/j.physe.2003.08.046

Cited by 8 publications

(11 citation statements)

References 20 publications

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“…In these QDs, a direct energy relaxation of the photogenerated electron to the ground state is blocked due to Pauli exclusion principle. However, the electron-hole pair in the excited state can undergo a flip-flop transition, 6,21,22 in which a simultaneous flip of the electron and hole spins takes place [ Fig. 2(ii)].…”

Section: Fig 1: (Color Online) Time-dependence Of ρC Measured Formentioning

confidence: 99%

Nuclear-spin effects in singly negatively charged InP quantum dots

et al. 2007

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Experimental investigation of nuclear spin effects on the electron spin polarization in singly negatively charged InP quantum dots is reported. Pump-probe photoluminescence measurements of electron spin relaxation in the microsecond timescale are used to estimate the time-period TN of the Larmor precession of nuclear spins in the hyperfine field of electrons. We find TN to be ∼ 1 µs at T ≈ 5 K, under the vanishing external magnetic field. From the time-integrated measurements of electron spin polarization as a function of a longitudinally applied magnetic field at T ≈ 5 K, we find that the Overhauser field appearing due to the dynamic nuclear polarization increases linearly with the excitation power, though its magnitude remains smaller than 10 mT up to the highest excitation power (50 mW) used in these experiments. The effective magnetic field of the frozen fluctuations of nuclear spins is found to be 15 mT, independent of the excitation power.

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Section: Fig 1: (Color Online) Time-dependence Of ρC Measured Formentioning

confidence: 99%

Nuclear-spin effects in singly negatively charged InP quantum dots

et al. 2007

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“…This theoretical prediction has stimulated the studies of spin relaxation in low-dimensional structures. [3][4][5][6][7][8] The most exciting experimental results achieved in this field were the electron spin relaxation time T 1 ജ 50 s, observed for the one-electron QD ͑Ref. 5͒ and T 1 ϳ 20 ms observed for the InGaAs self-assembled QDs.…”

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confidence: 99%

“…To study the electron spin memory, we used a modification of the known pump-probe technique with detection of the polarized photoluminescence signal ͑PL pump probe͒. 4,6,9 The method involves detection of the effect of a circularly polarized pump on polarization of the PL excited by a probe beam. The PL pump-probe method makes it possible to overcome the limitation of the experimental study of spin dynamics related to finiteness of the electron-hole pair lifetime.…”

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confidence: 99%

Submillisecond electron spin relaxation in InP quantum dots

et al. 2005

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“…In the neutral quantum dots, the electron-hole exchange interaction plays a dominant role in the electron spin relaxation. 22,23 The effective magnetic field due to the exchange interaction is considered to be larger than that due to the hyperfine interaction through the fluctuating nuclear spin orientations, although the spin relaxation due to the hyperfine interaction is important in the quantum dots. 21 It is because the exchange energy reached to an order of 100 eV due to the threedimensional confinement as is compared with the energy of the fluctuating hyperfine field of an order of 1 eV.…”

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Spin relaxation mechanism of strain-induced GaAs quantum dots studied by time-resolved Kerr rotation

Kanno

Masumoto

2006

Phys. Rev. B

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We observed electron spin precession under magnetic field in single-layer quantum dots ͑QDs͒ by highly sensitive time-resolved Kerr rotation measurement. The spin lifetime is longer than that for the quantum well ͑QW͒. This is a result of the additional spatial confinement of electrons in QDs. Below 60 K, the spin lifetime is almost constant, and is 7 times shorter than the carrier lifetime. This suggests that the strong electron-hole exchange interaction dominates over the electron spin lifetime in QDs at low temperature.

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Optical orientation and spin relaxation of resident electrons in n-doped InAs/GaAs self-assembled quantum dots

Cited by 8 publications

References 20 publications

Nuclear-spin effects in singly negatively charged InP quantum dots

Nuclear-spin effects in singly negatively charged InP quantum dots

Submillisecond electron spin relaxation in InP quantum dots

Spin relaxation mechanism of strain-induced GaAs quantum dots studied by time-resolved Kerr rotation

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