2016 China Semiconductor Technology International Conference (CSTIC) 2016
DOI: 10.1109/cstic.2016.7464076
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Investigations of hot carrier injection on NMOSFET with high Vds and low Vgs stress

Abstract: Hot Carrier Injection (HCI) is a critical reliability concern especially for NMOSFET in IC. The drain current (Id) shift of NMOS at high Vds (drain stress) and low Vgs (gate stress) conditions was investigated in this paper. We found that the drain current (Id @ Vgs = 0.62V, Vds = 5.5V) increased versus time at the stress conditions of Vgs = 0.62V, Vds = 5.5V while Idsat degraded at high Vds and low Vgs stress conditions. The dominant mechanism for this phenomenon is that the positive-charged traps generated i… Show more

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