2009
DOI: 10.1016/j.jallcom.2008.11.118
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Investigations of the properties of Zn1−xCrxO thin films grown by RF magnetron sputtering

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Cited by 13 publications
(7 citation statements)
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“…In 2000, Dietl et al [4] theoretically predicted that the T c of ZnO and GaN based compounds could be raised up to room temperature within a mean-field picture. Since then, intense interest has been focused on ZnO doped with a variety of transition metals (TM) [5][6][7][8][9][10][11][12][13][14][15][16][17]. Among all known TM doped ZnO systems, Ni-based materials are probably the most controversial [18][19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…In 2000, Dietl et al [4] theoretically predicted that the T c of ZnO and GaN based compounds could be raised up to room temperature within a mean-field picture. Since then, intense interest has been focused on ZnO doped with a variety of transition metals (TM) [5][6][7][8][9][10][11][12][13][14][15][16][17]. Among all known TM doped ZnO systems, Ni-based materials are probably the most controversial [18][19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, when doped with transition metals, dilutes magnetism was observed in ZnO besides its excellent photoelectric properties. As a result, ZnO-based dilutes magnetic semiconductors (DMSs) have been widely studied due to their application for magneto electronic and spintrinic devices [1][2][3][4]. Recently, Pavle and Daniel have reported the high-T c ferromagnetism in nanocrystalline Ni 2+ :ZnO [3].…”
Section: Introductionmentioning
confidence: 99%
“…Although room-temperature FM has been found [14,15], there are still some reports indicating no sign of FM [16,17], or attributing to the secondary phase. Until now, no consensus has been constructed concerning the origin.…”
Section: Introductionmentioning
confidence: 99%