2019
DOI: 10.1063/1.5126150
|View full text |Cite
|
Sign up to set email alerts
|

Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy

Abstract: Epitaxial growth of (111) oriented NiO layers on (−201) oriented β-Ga2O3 and vice versa have been carried out to obtain an all oxide p-n heterojunction (HJ) consisting of NiO/β-Ga2O3 and β-Ga2O3/NiO interfaces, respectively. Careful investigations by minimizing the effect of differential charging phenomena during x-ray photoelectron spectroscopy measurements yield a valence band offset (VBO) value of 1.6 ± 0.2 eV for both NiO/β-Ga2O3 and β-Ga2O3/NiO HJs. Thus, the VBO value is practically independent of the gr… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

4
25
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 41 publications
(29 citation statements)
references
References 44 publications
4
25
0
Order By: Relevance
“…, conduction band offset (Δ E C ), valence band offset (Δ E V ), the built-in potential, and the barrier height (Φ B ), governs the transport characteristics and electron confinement of the heterojunction. , Therefore, the band structure of the a-Ga 2 O 3 /ITO heterojunction needs to be considered. To determine the band alignment, high-resolution X-ray photoelectron spectroscopy (XPS) was measured to check the core level peak positions. , Δ E V is calculated by Kraut’s method where and are the binding energy of the valence band maximum (VBM) and core levels of Ga 2 O 3 sample; the and are the binding energy of the VBM and core levels of ITO sample, and are the core levels of ultrathin Ga 2 O 3 film (3 nm) grown on ITO.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…, conduction band offset (Δ E C ), valence band offset (Δ E V ), the built-in potential, and the barrier height (Φ B ), governs the transport characteristics and electron confinement of the heterojunction. , Therefore, the band structure of the a-Ga 2 O 3 /ITO heterojunction needs to be considered. To determine the band alignment, high-resolution X-ray photoelectron spectroscopy (XPS) was measured to check the core level peak positions. , Δ E V is calculated by Kraut’s method where and are the binding energy of the valence band maximum (VBM) and core levels of Ga 2 O 3 sample; the and are the binding energy of the VBM and core levels of ITO sample, and are the core levels of ultrathin Ga 2 O 3 film (3 nm) grown on ITO.…”
Section: Resultsmentioning
confidence: 99%
“…To determine the band alignment, high-resolution X-ray photoelectron spectroscopy (XPS) was measured to check the core level peak positions. 48,49 ΔE V is calculated by Kraut's method…”
Section: Introductionmentioning
confidence: 99%
“…As is well-known, WO 3 , with ∼2.7 eV energy bandwidth ( E g ), has a small amount of oxygen vacancies to form n-type semiconductors, while NiO x has metal vacancies to form p-type semiconductors, with an energy bandwidth of ∼3.7 V. , As shown in Figure b, the interface between NiO x and WO 3 –x :Ti in the equilibrium state forms a space charge region composed of metal vacancies V Ni and oxygen vacancies V O due to the migration of O 2– . In addition, due to the large work function of Pt (∼5.65 eV), a small number of electrons in the p-type semiconductor NiO x flow to Pt.…”
mentioning
confidence: 97%
“…It is the interface of Pt/NiO x and NiO x /WO 3 –x :Ti that plays the role of rectification, which leads to strong rectification characteristics of device. The energy band state of the device was roughly drawn using the energy band values in refs . The barrier bending model under equilibrium is shown in the right of Figure b.…”
mentioning
confidence: 99%
See 1 more Smart Citation