Research on Pt/NiO_x/WO_3–x:Ti/W Multijunction Memristors with Synaptic Learning and Memory Functions

Abstract

Artificial synapses based on biological synapses represent a new idea in the field of artificial intelligence with future applications. Current two-terminal RRAM devices have developed tremendously due to the adjustable synaptic plasticity of artificial synapses. However, these devices still have some problems, such as current leakage and poor durability. Here, we demonstrate a Pt/NiO x /WO3–x :Ti/W memristor with a pn-type heterojunction and two metal–semiconductor contacts, which exhibits good rectification. Due to the change in the internal potential barrier, the devices possess multiconductance states under different pulse modulations and memory characteristics, similar to synapses. The rectification characteristics of the device exhibit stable enhancement and suppression behavior. Each device in the 10 × 10 cross array we constructed can be written correctly, which verifies that leakage current does not appear in the device. The structure proposed in this work has great significance for the integration of large-scale memristor cross arrays.

Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

“…Memristors, featuring high nonlinearity, , low power consumption, , and continuously modulated conductance, , have made significant progress and breakthroughs ranging from memory-in logic, T-bit data storage, and bioinspired neuromorphic computing. − Memristive materials include three categories: oxides, , chalcogenides, , and organics. , Oxides compatible with CMOS as the mainstream switching layer have been extensively investigated for decades . In contrast to oxides, organics with tremendous varieties due to the millions of carbon, hydrogen, oxygen, and nitrogen compositions exhibit unique memristive synapse adjustability to faithfully mimic the neurological system’s function. , …”

Exchange Bias Coupling and Bipolar Resistive Switching at Room Temperature on GaSb/Mn Multilayers for Resistive Memories Applications

“…Another reported resistive switching mechanism is based on the transmission of slower mobility ions instead of electrons, which is re ected in a gradual change in current with respect to a voltage pulse [14]. In the Transmission of slower mobility ions NiO x Bipolar [14] On the other hand, among non-volatile memories (NVM), the magnetoresistive random access memory (MRAM) is the most studied [20]. This structure consists of ferromagnetic layers separated by an ultrathin metal oxide layer that works as a tunnel barrier.…”

Ag/HfOx/Pt Unipolar Memristor for High-Efficiency Logic Operation

“…Memristors, an emerging nanoscale electronic device with unique superiority in ultrahigh data storage, − memory logic applications, − and neuromorphic computing, − have been extensively examined by academia and industry. With a suitable permittivity (15–25) and a tunable oxygen vacancy (V o ) distribution, HfO 2 has been extensively investigated as a memristor. − Chen et al reported that the HfO 2 -based memristor exhibited a bipolar resistive switching (BRS) with high cycling endurance (>10 10 cycles), a low SET/RESET voltage (<2.0 V), and a fast response time (<10 ns) .…”