Investigations on DC conductivity of AlN

Breit, F.; Lebey, Thierry; Agnel, S.; Toureille, A.

doi:10.1109/ceidp.2001.963491

Cited by 6 publications

(6 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, Breit et al observed Ohmic conduction for low field and space charge limited current mechanism for high field. 10 Mangalaraj et al investigated the conduction mechanism of AlN films deposited on glass substrates by ion plating in the low and high conduction states and found that the low conduction process was the Ohmic one while the high conduction process was predominantly Schottky. 38 Talyansky et al studied the electrical transport across the TiN/AlN/TiN capacitors on the AlN grown by pulsed laser deposition ͑PLD͒ technique and concluded that the conduction was Ohmic in low field region while the ionic model fitted well with the leakage current characteristic for higher fields.…”

Section: The Steady-state Behavior Of Aln Capacitorsmentioning

confidence: 98%

“…[7][8][9][10][11][12] However, detailed investigations on the time and the frequency domains, the transient and the steady-state domains, the conduction mechanisms, and the BD strength of the AlN have not yet been carried out. The purpose of this article is to report our recent work on the electrical properties of the AlN thin film on metal-insulatormetal ͑MIM͒ structures.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling

Hassine¹,

Mercier²,

Renaux³

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Section: The Steady-state Behavior Of Aln Capacitorsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling

Hassine¹,

Mercier²,

Renaux³

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The electrical behavior of sintered ceramics was determined as a function of the temperature by measuring the leakage current passing through the volume of the sample under an applied electrical field. The conduction mechanism of aluminum nitride has been attributed to Space Charge Limited Current (SCLC) by numerous authors [ 19 , 20 ]. Leakage current measurement (LM) allowed for determining the mode of conduction according to the SCLC mechanism as a function of the applied electrical field and temperature.…”

Section: Resultsmentioning

confidence: 99%

“…The conduction mechanism of AlN ceramics has been determined and corresponds to the Space Charge Limited Current (SCLC) theory [ 19 , 20 ]. This mechanism can be schematized as presented in Figure 18 .…”

Section: Discussionmentioning

confidence: 99%

“…According to Figure 14 and Table 4 , it can be assumed that the electrical behavior of sintered samples is attributed to the space charge limited current mechanism thanks to linear representations. The identification of SCLC conduction within aluminum nitride has been presented by Roske et al [ 29 ] and Breit et al [ 20 ]. These authors presented two slopes in the J (E) logarithmic representation.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Comparative Study on Electrical Conductivity of CeO2-Doped AlN Ceramics Sintered by Hot-Pressing and Spark Plasma Sintering

et al. 2022

View full text Add to dashboard Cite

Aluminum nitride (AlN) ceramics were prepared by both Hot-pressing (HP) and Spark-Plasma-Sintering (SPS) using cerium oxide as the sintering aid. The characterization of AlN raw powder denoted the presence of an amorphous layer that led to the formation of aluminum oxide. During the sintering process, CeO2 introduced as a sintering aid was reduced into Ce2O3. The latter reacted with aluminum oxide to form a transient liquid phase that promotes sintering by both HP and SPS. A reactional path leading to the formation of secondary phases, such as CeAlO3 and CeAl11O18, has been proposed according to the pseudo-binary Al2O3 – Ce2O3. Ceramics obtained from HP and SPS are presented as similar, except for the secondary-phase distribution. The influences of secondary phase composition and distribution on electrical conductivity were evaluated by leakage current measurements. The mechanism of DC conduction and the global conductivity of ceramics were discussed according to the sintering process and the number of secondary phases.

show abstract

Comparative study of AlN dielectric films’ electrical properties for MEMS capacitive switches

Koutsoureli

Adikimenakis

Michalas

et al. 2014

Microelectronic Engineering

View full text Add to dashboard Cite

a b s t r a c tIn the present work the electrical properties of aluminum nitride (AlN) films deposited by plasmaassisted molecular beam epitaxy (PA-MBE) and magnetron sputtering have been investigated in the transient and steady state domains. Charging and discharging current transients have been found to obey stretched exponential law, in agreement to Kohlrausch-Williams-Watts polarization relaxation found in many materials containing some degree of disorder, and both charging and discharging processes are found to be thermally activated. The activation energy for charging process in PA-MBE film differs from the one obtained for the discharging process while in sputtered films charging and discharging processes revealed the same activation energy, which is quite larger from the corresponding values in PA-MBE films. However, in all cases the obtained values for different activation energies are associated to nitrogen vacancies in AlN films. Finally, the temperature and voltage dependence of the leakage current in both films has been investigated, in order to study the carrier transport in AlN films. PA-MBE films revealed different conduction mechanisms from sputtered films, fact that can be attributed to differences in the film structure. Moreover, the dc conductivity in sputtered films has been found to be about three orders of magnitude smaller than the corresponding values obtained in PA-MBE films.

show abstract

Investigations on DC conductivity of AlN

Cited by 6 publications

References 5 publications

Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling

Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling

Comparative Study on Electrical Conductivity of CeO2-Doped AlN Ceramics Sintered by Hot-Pressing and Spark Plasma Sintering

Comparative study of AlN dielectric films’ electrical properties for MEMS capacitive switches

Contact Info

Product

Resources

About