Investigations on phase change characteristics of Ti-doped Ge₂Sb₂Te₅system

Thickness dependence of a giant nonlinear saturable absorption response in GeSb4Te7 thin films

“…The optical band gaps obtained by Tauc plot method are in good agreement with reported values [12,22], although the presence of defects may usually make band gaps slightly larger [23]. Moreover, a comparable thickness dependence of optical band gap is also observed in our previous work [15], which is found to originate from the quantum-confinement effect [24,25]. Then the variation of optical band gap, containing the effect of both defect and physical energy gap, further affects the variation of NOA in the samples with different thicknesses.…”

Disorder and compositional dependences in Urbach-Martienssen tails in amorphous (GeTe)x(Sb2Te3)1−x alloys

“…Obtained values of the optical band gap are consistent with results presented in other works. The previously reported values of optical bang-gap in amorphous Ge 1 Sb 2 Te 4 vary from 0.69 eV to 0.76 eV 3,26 , in amorphous Ge 2 Sb 2 Te 5 vary from 0.7 eV to 0.75 eV 18,26,28,29 , in amorphous GeTe they vary from 0.85 eV to 0.9 eV 12,30 . These minor discrepancies can be explained by the difference in the quality of samples obtained using different techniques.…”

Recent advances in doped Ge2Sb2Te5 thin film based phase change memories

“…In order to strengthen the properties of GST thin films, various elements from p-block and d-block were doped in GST. The incorporation of transition metal (TM) elements (W, 42,43 Cu, 44,45 Ti, 46–49 Zn, 50 Cr, 51 Ag, 18,39,52–55 Ru, 56 and Ni 57 ) and p-block elements (Se, 58 As, 59 Sn, 41,60 N, 61–67 C, 68–70 Ge, 71 Al, 72,73 O, 66,74,75 In, 76–78 Ga, 79 Sb, 80–84 and Si 85–90 ) into the GST host matrix is reported to significantly tailor its properties which can find applications in various technological applications.…”

“…In order to strengthen the properties of GST thin films, various elements from p-block and d-block were doped in GST. The incorporation of transition metal (TM) elements (W 42,43 , Cu 44,45 , Ti [46][47][48][49] , Zn 50 , Cr 51 , Ag 18,39,[52][53][54][55] , Ru 56 , and Ni 57 ) and p-block elements (Se 58 , As 59 , Sn 41,60 , N [61][62][63][64][65][66][67] , C [68][69][70] , Ge 71 , Al 72,73 , O 66,74,75 , In [76][77][78] , Ga 79 , Sb [80][81][82][83][84] , and Si [85][86][87]…”