Investigations on the characterization of ion implanted hexagonal boron nitride

Abstract

The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 x 10 14 -1 x 10 16 ions/cm 2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmision Electron Microscopy (TEM) results also are reported briefly.

Allotrope conversion and surface hardness increase in ion implanted boron nitride

“…Hardness testing of the implanted BN samples was carried out using the FM-700 micro- Cubic BN with nanoscale particles tends to show the LO phonon modes [4,[7][8], shifted to lower energies, as we see here after implantation as broad peaks around 1300 cm -1 ; this peak indicates a phase change to cubic-BN, as reported in detail before [1][2][3][4][5].…”

“…Cubic BN is synthesized in industrial quantities under pressure, but it has been shown that the implantation of light ions into h-BN can trigger a phase change to c-BN, which forms a thin layer of nanoparticles (9nm) within the implanted region. From Raman, X-ray and infrared analyses [1][2][3][4][5] there is an optimum ion fluence for He + , Li + , B + and N + which decreases as the ion mass increases. The creation of interstitial defects is thought to tip the structure from hexagonal layers to the tetrahedral cubic form.…”

“…Raman spectroscopy was used to analyse the samples to confirm any ion induced phase change reported in [1][2][3][4][5]. This was done by taking Raman measurements (the 514.5nm…”

Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride

“…Three different samples have been used in a previous work (12,13) including polycrystalline rods, polycrystalline sheets and single-crystal h-BN samples. *Corresponding author.…”

Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride

“…Raman measurements under similar conditions of temperature and energy for different fluences have been reported in [37], [44]. The Raman lineshape and position for c-BN will vary depending of the size of the crystals being analysed.…”