Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests

Zhou, Xintian; Su, Hongyuan; Wang, Yan; Yue, Ruifeng; Dai, Gang; Li, Juntao

doi:10.1109/ted.2016.2606882

Cited by 72 publications

(29 citation statements)

References 24 publications

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“…An increase in the net positive charge (i.e., hole trapping) will result in a negative shift of the threshold voltage, whereas an increase in the net negative charge (i.e., electron trapping) will result in a positive shift of the threshold voltage. The threshold voltage shift has been observed under normal turn-on/turn-off operations [12]- [14], but also under short circuit events [3].…”

Section: Introductionmentioning

confidence: 98%

“…However, the reliability of the SiC MOSFET needs to be further assessed [2], especially for applications requiring shortcircuit proof devices such in the case of motor drive applications. Many efforts have been devoted to the short-circuit robustness testing of SiC MOSFETs under non-destructive operations; while some of them investigated the ageing of the device with a Repetitive Short Circuit testing approach [3]- [5], other identified degradation mechanisms with a stressful single short-circuit event [6]- [8].…”

Section: Introductionmentioning

confidence: 99%

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Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

Reigosa

Iannuzzo

Ceccarelli

2018

Microelectronics Reliability

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This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

Reigosa

Iannuzzo

Ceccarelli

2018

Microelectronics Reliability

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“…That is because the short-circuit current in SiC MOSFETs rises faster than that in the Si devices. Short-circuit behavior of the SiC MOSFETs are investigated in [14]- [15] [16]. In [14], the authors explained the design procedure of a SiC MOSFET short-circuit protection that can act under 600 ns.…”

Section: A Short/open-circuit Faultsmentioning

confidence: 99%

Investigation of Fault-Tolerant Capabilities in an Advanced Three-Level Active T-Type Converter

Katebi

Weise

2019

IEEE J. Emerg. Sel. Topics Power Electron.

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A novel fault-tolerant three-level power converter topology, named advanced three-level active T-Type (A3L-ATT) converter, is introduced to increase the reliability of multilevel power converters used in safety-critical applications. This new fault-tolerant multilevel power converter is derived from the conventional T-Type converter topology. The topology has significantly improved the fault-tolerant capability under any open circuit or certain short-circuit faults in the semiconductor devices. In addition, under healthy condition, the redundant

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“…The change in drain current slope and the appearance of drain current tails at turn-off have been discussed in [4] and [5]. Moreover, the static characteristics before and after the SC tests have also been investigated; among these, the positive and negative shift of threshold voltage (Vth) has been discussed in [6] and [7], respectively. The longer pulse time duration (tSC), larger number of repetitive short circuits (from 1 pulse to 100 pulses SC) and larger gate-source voltage (from +18 V/-5 V to +20 V/-5 V) during SC tests could aggravate the variation of threshold voltage at several hundred mV level [8].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

Reigosa

Iannuzzo

et al. 2018

Microelectronics Reliability

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This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2 nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.

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Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests

Cited by 72 publications

References 24 publications

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

Investigation of Fault-Tolerant Capabilities in an Advanced Three-Level Active T-Type Converter

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

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Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests

Cited by 72 publications

References 24 publications

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

Investigation of Fault-Tolerant Capabilities in an Advanced Three-Level Active T-Type Converter

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

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Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules