Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures

InGaAs/InP multiple quantum well modulators in experiment and theory

“…in agrees well with models assuming an interface roughness of one monolayer[52][53][54][55][56]. A weak LO-phonon satellite line is Luminescence…”

New frontier in transmission IR spectroscopy of molecules adsorbed on high surface area solids: Experiments below liquid nitrogen temperature

“…In this context, time resolved (where temperature and pressure are kept constant during the experiment), temperature resolved (where the number of probe molecules in the cell is kept constant while changing the temperature) and pressure resolved (where temperature is fixed, while pressure is changing by acting on the number of probe molecules in the cell) FT-IR spectroscopy represents an useful tool for characterization purposes and for kinetic studies concerning several kind of reactions [10]. However, notwithstanding the fact that commercial cryostats able to reach liquid helium temperatures were available since decades and widely employed in the field of solid state physics [11][12][13][14][15], the lower temperature value at which experiments were performed was limited for a long period to 77 K, mainly due to practical problems. This was mainly due to the www.elsevier.com/locate/cattod Catalysis Today 113 (2006) [65][66][67][68][69][70][71][72][73][74][75][76][77][78][79][80] incompatibility of the materials used to reach and confine very low temperatures with the high temperatures usually needed to activate the surfaces of catalysts, that has prevented for long time the overcoming of the 77 K barrier in FT-IR experiments of species adsorbed on active surface sites.…”

InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy

“…Several processes involving atom surface segregation and exchange are known to occur during InGaAs/InP heterostructure growth [16,17], resulting in an asymmetry relative to the growth direction of the heterostructures. Although as shown below the expected magnitude of such effects in the STM images is quite small (≈0.1 Å, which is the same as our estimated uncertainty for interpreting the STM images purely in terms of strain-induced topographic effects [5,6]), results from other techniques such as XRD also have considerable uncertainty in observing these effects.…”

“…A similar process occurs on the InGaAs surface resulting in the formation of a tensilely strained InGaAsP layer between the InGaAs and InP layers. There is also a tendency to carry over As from the InGaAs growth into the following InP barrier [17], resulting in slightly compressively strained InAsP barrier material. This As carry over can been seen in STM images (Figs.…”